IPP048N04NG

IPP048N04 - 12V-300V N-CHANNEL P

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Specifications
Part Number:IPP048N04NG
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:IPP048N04 - 12V-300V N-CHANNEL P
Nkesp Part Number:73D-IPP048N04NG
Part Status4325 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:4V @ 200µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO220-3-1
Series:OptiMOS® 3
Rds On (Max) @ Id, Vgs:4.8mOhm @ 70A, 10V
Power Dissipation (Max):79W (Tc)
Package / Case:TO-220-3
Package:Bulk
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:70A (Tc)

In stock: 4325 pcs

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Product Comparison

Part Number IPP048N04NG
IPP048N04NG
IPP048N12N3GXKSA1
IPP048N12N3GXKSA1
IPP040N08NF2SAKMA1
IPP040N08NF2SAKMA1
IPP041N12N3GXKSA1
IPP041N12N3GXKSA1
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Supplier Device PackagePG-TO220-3-1PG-TO220-3-1PG-TO220-3PG-TO220-3
Gate Charge (Qg) (Max) @ Vgs41 nC @ 10 V182 nC @ 10 V81 nC @ 10 V211 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3300 pF @ 25 V12000 pF @ 60 V3800 pF @ 40 V13800 pF @ 60 V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Drive Voltage (Max Rds On, Min Rds On)10V10V6V, 10V10V
Vgs(th) (Max) @ Id4V @ 200µA4V @ 230µA3.8V @ 85µA4V @ 270µA
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
PackageBulkTubeTubeTube
Rds On (Max) @ Id, Vgs4.8mOhm @ 70A, 10V4.8mOhm @ 100A, 10V4mOhm @ 80A, 10V4.1mOhm @ 100A, 10V
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Current - Continuous Drain (Id) @ 25°C70A (Tc)100A (Tc)22A (Ta), 115A (Tc)120A (Tc)
SeriesOptiMOS® 3OptiMOS™StrongIRFET™ 2OptiMOS™
Vgs (Max)±20V±20V±20V±20V
FET Feature----
Drain to Source Voltage (Vdss)40 V120 V80 V120 V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Power Dissipation (Max)79W (Tc)300W (Tc)3.8W (Ta), 150W (Tc)300W (Tc)

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