In stock: 4381 pcs
| Part Number |
IPI65R420CFDXKSA1
 |
IPI70N10S3L12AKSA1
 |
IPI65R600C6
|
IPI65R600C6XKSA1
|
|
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | |
| Power Dissipation (Max) | 83.3W (Tc) | 125W (Tc) | 63W (Tc) | 63W (Tc) | |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 100 V | 5550 pF @ 25 V | 440 pF @ 100 V | 440 pF @ 100 V | |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| Package | Tube | Tube | Bulk | Bulk | |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | |
| Drain to Source Voltage (Vdss) | 650 V | 100 V | 650 V | 650 V | |
| Current - Continuous Drain (Id) @ 25°C | 8.7A (Tc) | 70A (Tc) | 7.3A (Tc) | 7.3A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | 10V | 10V | |
| FET Feature | - | - | - | - | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TO262-3 | PG-TO262-3 | PG-TO262-3-1 | PG-TO262-3 | |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V | 80 nC @ 10 V | 23 nC @ 10 V | 23 nC @ 10 V | |
| Base Product Number | IPI65R | IPI70N | - | - | |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 3.4A, 10V | 12.1mOhm @ 70A, 10V | 600mOhm @ 2.1A, 10V | 600mOhm @ 2.1A, 10V | |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | |
| Series | CoolMOS™ | OptiMOS™ | CoolMOS™ | CoolMOS™ | |
| Vgs(th) (Max) @ Id | 4.5V @ 340µA | 2.4V @ 83µA | 3.5V @ 210µA | 3.5V @ 210µA | |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
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