In stock: 4623 pcs
Part Number |
IPI26CNE8N G
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IPI45N06S409AKSA1
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IPI16CN10N G
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IPI45N06S4L08AKSA2
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Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | |
Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | - | |
Vgs(th) (Max) @ Id | 4V @ 39µA | 4V @ 34µA | 4V @ 61µA | - | |
Rds On (Max) @ Id, Vgs | 26mOhm @ 35A, 10V | 9.4mOhm @ 45A, 10V | 16.2mOhm @ 53A, 10V | - | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | - | |
Mounting Type | Through Hole | Through Hole | Through Hole | - | |
Supplier Device Package | PG-TO262-3 | PG-TO262-3 | PG-TO262-3 | - | |
FET Type | N-Channel | N-Channel | N-Channel | - | |
Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V | 47 nC @ 10 V | 48 nC @ 10 V | - | |
Base Product Number | IPI26C | IPI45N | IPI16C | - | |
Vgs (Max) | ±20V | ±20V | ±20V | - | |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) | 45A (Tc) | 53A (Tc) | - | |
FET Feature | - | - | - | - | |
Drain to Source Voltage (Vdss) | 85 V | 60 V | 100 V | - | |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | |
Power Dissipation (Max) | 71W (Tc) | 71W (Tc) | 100W (Tc) | - | |
Package | Tube | Tube | Tube | Bulk | |
Input Capacitance (Ciss) (Max) @ Vds | 2070 pF @ 40 V | 3785 pF @ 25 V | 3220 pF @ 50 V | - | |
Series | OptiMOS™ | OptiMOS™ | OptiMOS™ | * | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | - |
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