IPI120N04S402AKSA1

MOSFET N-CH 40V 120A TO262-3

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Specifications
Part Number:IPI120N04S402AKSA1
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 40V 120A TO262-3
RoHs Status:
Nkesp Part Number:73D-IPI120N04S402AKSA1
Part Status9895 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:4V @ 110µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO262-3
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:2.1mOhm @ 100A, 10V
Power Dissipation (Max):158W (Tc)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Package:Tube
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:10740 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:134 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Base Product Number:IPI120
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In stock: 9895 pcs

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Data sheet

Product Comparison

Part Number IPI120N04S402AKSA1
IPI120N04S402AKSA1
IPI120N08S403AKSA1
IPI120N08S403AKSA1
IPI120N08S404AKSA1
IPI120N08S404AKSA1
IPI120N04S401AKSA1
IPI120N04S401AKSA1
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Power Dissipation (Max)158W (Tc)278W (Tc)179W (Tc)188W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
FET Feature----
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Rds On (Max) @ Id, Vgs2.1mOhm @ 100A, 10V2.8mOhm @ 100A, 10V4.4mOhm @ 100A, 10V1.9mOhm @ 100A, 10V
Drain to Source Voltage (Vdss)40 V80 V80 V40 V
Vgs(th) (Max) @ Id4V @ 110µA4V @ 223µA4V @ 120µA4V @ 140µA
Input Capacitance (Ciss) (Max) @ Vds10740 pF @ 25 V11550 pF @ 25 V6450 pF @ 25 V14000 pF @ 25 V
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Current - Continuous Drain (Id) @ 25°C120A (Tc)120A (Tc)120A (Tc)120A (Tc)
SeriesOptiMOS™Automotive, AEC-Q101, OptiMOS™Automotive, AEC-Q101, OptiMOS™OptiMOS™
Supplier Device PackagePG-TO262-3PG-TO262-3-1PG-TO262-3-1PG-TO262-3
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AATO-262-3 Long Leads, I²Pak, TO-262AATO-262-3 Long Leads, I²Pak, TO-262AATO-262-3 Long Leads, I²Pak, TO-262AA
Vgs (Max)±20V±20V±20V±20V
Gate Charge (Qg) (Max) @ Vgs134 nC @ 10 V167 nC @ 10 V95 nC @ 10 V176 nC @ 10 V
PackageTubeTubeTubeTube
Base Product NumberIPI120IPI120IPI120NIPI120

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