IPG20N06S415ATMA2

MOSFET 2N-CH 8TDSON

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Specifications
Part Number:IPG20N06S415ATMA2
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET 2N-CH 8TDSON
RoHs Status:
Nkesp Part Number:73D-IPG20N06S415ATMA2
Part Status30540 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:4V @ 20µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TDSON-8-4
Series:Automotive, AEC-Q101, OptiMOS™
Rds On (Max) @ Id, Vgs:15.5mOhm @ 17A, 10V
Power - Max:50W
Package / Case:8-PowerVDFN
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:2260pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:29nC @ 10V
FET Feature:-
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:20A
Configuration:2 N-Channel (Dual)
Base Product Number:IPG20N
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In stock: 30540 pcs

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Data sheet

Product Comparison

Part Number IPG20N06S415ATMA2
IPG20N06S415ATMA2
IPG20N06S4L26ATMA1
IPG20N06S4L26ATMA1
IPG20N06S2L35AATMA1
IPG20N06S2L35AATMA1
IPG20N06S2L65AATMA1
IPG20N06S2L65AATMA1
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V20nC @ 10V23nC @ 10V12nC @ 10V
Vgs(th) (Max) @ Id4V @ 20µA2.2V @ 10µA2V @ 27µA2V @ 14µA
SeriesAutomotive, AEC-Q101, OptiMOS™OptiMOS™Automotive, AEC-Q101, OptiMOS™Automotive, AEC-Q101, OptiMOS™
Package / Case8-PowerVDFN8-PowerVDFN8-PowerVDFN8-PowerVDFN
Configuration2 N-Channel (Dual)2 N-Channel (Dual)2 N-Channel (Dual)2 N-Channel (Dual)
Supplier Device PackagePG-TDSON-8-4PG-TDSON-8-4PG-TDSON-8-10PG-TDSON-8-10
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Drain to Source Voltage (Vdss)60V60V55V55V
Power - Max50W33W65W43W
Input Capacitance (Ciss) (Max) @ Vds2260pF @ 25V1430pF @ 25V790pF @ 25V410pF @ 25V
Current - Continuous Drain (Id) @ 25°C20A20A20A (Tc)20A
Base Product NumberIPG20NIPG20NIPG20NIPG20N
Rds On (Max) @ Id, Vgs15.5mOhm @ 17A, 10V26mOhm @ 17A, 10V35mOhm @ 15A, 10V65mOhm @ 15A, 10V
FET Feature-Logic Level GateLogic Level GateLogic Level Gate
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Mounting TypeSurface MountSurface MountSurface Mount, Wettable FlankSurface Mount, Wettable Flank

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