IPF041N10NF2SATMA1

TRENCH >=100V

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RFQ
Specifications
Part Number:IPF041N10NF2SATMA1
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:TRENCH >=100V
Nkesp Part Number:73D-IPF041N10NF2SATMA1
Part Status19221 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:-
Vgs (Max):-
Technology:-
Supplier Device Package:-
Rds On (Max) @ Id, Vgs:-
Power Dissipation (Max):-
Package / Case:-
Operating Temperature:-
Mounting Type:-
Input Capacitance (Ciss) (Max) @ Vds:-
Gate Charge (Qg) (Max) @ Vgs:-
FET Type:-
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):-
Drain to Source Voltage (Vdss):-
Current - Continuous Drain (Id) @ 25°C:-

In stock: 19221 pcs

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Product Comparison

Part Number IPF041N10NF2SATMA1
IPF041N10NF2SATMA1
IPF016N06NF2SATMA1
IPF016N06NF2SATMA1
IPF015N10N5ATMA1
IPF015N10N5ATMA1
IPF016N10NF2SATMA1
IPF016N10NF2SATMA1
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Mounting Type-Surface Mount-Surface Mount
Operating Temperature--55°C ~ 175°C (TJ)--55°C ~ 175°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)-6V, 10V-6V, 10V
Drain to Source Voltage (Vdss)-60 V-100 V
Current - Continuous Drain (Id) @ 25°C-35A (Ta), 223A (Tc)-274A (Tc)
Gate Charge (Qg) (Max) @ Vgs-162 nC @ 10 V-241 nC @ 10 V
Power Dissipation (Max)-3.8W (Ta), 188W (Tc)-300W (Tc)
FET Type-N-Channel-N-Channel
Rds On (Max) @ Id, Vgs-1.7mOhm @ 100A, 10V-1.6mOhm @ 100A, 10V
Input Capacitance (Ciss) (Max) @ Vds-7300 pF @ 30 V-11000 pF @ 50 V
Vgs (Max)-±20V-±20V
Technology-MOSFET (Metal Oxide)-MOSFET (Metal Oxide)
Supplier Device Package-PG-TO263-7-U02-PG-TO263-7-14
Vgs(th) (Max) @ Id-3.3V @ 129µA-3.8V @ 267µA
FET Feature----
Package / Case-TO-263-7, D²Pak (6 Leads + Tab)-TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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