IPD90N06S4L05ATMA2

MOSFET N-CH 60V 90A TO252-31

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Specifications
Part Number:IPD90N06S4L05ATMA2
Manufacturer:Infineon Technologies
Description:MOSFET N-CH 60V 90A TO252-31
RoHs Status:
Nkesp Part Number:73D-IPD90N06S4L05ATMA2
Part Status19331 pcs
Manufacturer:Infineon Technologies
Vgs(th) (Max) @ Id:2.2V @ 60µA
Vgs (Max):±16V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO252-3-11
Series:Automotive, AEC-Q101, OptiMOS™
Rds On (Max) @ Id, Vgs:4.6mOhm @ 90A, 10V
Power Dissipation (Max):107W (Tc)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:8180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Base Product Number:IPD90
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In stock: 19331 pcs

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Product Comparison

Part Number IPD90N06S4L05ATMA2
IPD90N06S4L05ATMA2
IPD90N06S407ATMA1
IPD90N06S407ATMA1
IPD90P03P4L04ATMA2
IPD90P03P4L04ATMA2
IPD90N06S405ATMA2
IPD90N06S405ATMA2
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Current - Continuous Drain (Id) @ 25°C90A (Tc)90A (Tc)90A (Tc)90A (Tc)
Drain to Source Voltage (Vdss)60 V60 V30 V60 V
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63
FET Feature----
Vgs (Max)±16V±20V+5V, -16V±20V
Rds On (Max) @ Id, Vgs4.6mOhm @ 90A, 10V6.9mOhm @ 90A, 10V4.1mOhm @ 90A, 10V5.1mOhm @ 90A, 10V
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V56 nC @ 10 V160 nC @ 10 V81 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V10V-10V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Power Dissipation (Max)107W (Tc)79W (Tc)137W (Tc)107W (Tc)
Vgs(th) (Max) @ Id2.2V @ 60µA4V @ 40µA2V @ 253µA4V @ 60µA
Supplier Device PackagePG-TO252-3-11PG-TO252-3-11PG-TO252-3-11PG-TO252-3-11
Input Capacitance (Ciss) (Max) @ Vds8180 pF @ 25 V4500 pF @ 25 V11300 pF @ 25 V6500 pF @ 25 V
SeriesAutomotive, AEC-Q101, OptiMOS™OptiMOS™Automotive, AEC-Q101, OptiMOS®-P2Automotive, AEC-Q101, OptiMOS™
FET TypeN-ChannelN-ChannelP-ChannelN-Channel
Base Product NumberIPD90IPD90IPD90IPD90
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)

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