IPD80R2K8CEATMA1

MOSFET N-CH 800V 1.9A TO252-3

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Specifications
Part Number:IPD80R2K8CEATMA1
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 800V 1.9A TO252-3
RoHs Status:
Nkesp Part Number:73D-IPD80R2K8CEATMA1
Part Status33153 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:3.9V @ 120µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO252-3
Series:CoolMOS™ CE
Rds On (Max) @ Id, Vgs:2.8Ohm @ 1.1A, 10V
Power Dissipation (Max):42W (Tc)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:290 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:1.9A (Tc)
Base Product Number:IPD80R2
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In stock: 33153 pcs

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Product Comparison

Part Number IPD80R2K8CEATMA1
IPD80R2K8CEATMA1
IPD80R360P7ATMA1
IPD80R360P7ATMA1
IPD80R1K0CEATMA1
IPD80R1K0CEATMA1
IPD80R1K4CEATMA1
IPD80R1K4CEATMA1
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Supplier Device PackagePG-TO252-3PG-TO252-3PG-TO252-3PG-TO252-3
SeriesCoolMOS™ CECoolMOS™ P7CoolMOS™ CECoolMOS™
Drain to Source Voltage (Vdss)800 V800 V800 V800 V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Power Dissipation (Max)42W (Tc)84W (Tc)83W (Tc)63W (Tc)
Vgs (Max)±20V±20V±20V±20V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V30 nC @ 10 V31 nC @ 10 V23 nC @ 10 V
Base Product NumberIPD80R2IPD80RIPD80R1IPD80R1
Current - Continuous Drain (Id) @ 25°C1.9A (Tc)13A (Tc)5.7A (Tc)3.9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds290 pF @ 100 V930 pF @ 500 V785 pF @ 100 V570 pF @ 100 V
Rds On (Max) @ Id, Vgs2.8Ohm @ 1.1A, 10V360mOhm @ 5.6A, 10V950mOhm @ 3.6A, 10V1.4Ohm @ 2.3A, 10V
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
FET Feature----
Vgs(th) (Max) @ Id3.9V @ 120µA3.5V @ 280µA3.9V @ 250µA3.9V @ 240µA

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