IPD80R1K2P7ATMA1

MOSFET N-CH 800V 4.5A TO252-3

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Specifications
Part Number:IPD80R1K2P7ATMA1
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 800V 4.5A TO252-3
RoHs Status:
Nkesp Part Number:73D-IPD80R1K2P7ATMA1
Part Status23157 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:3.5V @ 80µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO252-3
Series:CoolMOS™ P7
Rds On (Max) @ Id, Vgs:1.2Ohm @ 1.7A, 10V
Power Dissipation (Max):37W (Tc)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:300 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
Base Product Number:IPD80R1
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In stock: 23157 pcs

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Product Comparison

Part Number IPD80R1K2P7ATMA1
IPD80R1K2P7ATMA1
IPD80R360P7ATMA1
IPD80R360P7ATMA1
IPD80N04S306ATMA1
IPD80N04S306ATMA1
IPD80R2K7C3AATMA1
IPD80R2K7C3AATMA1
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Rds On (Max) @ Id, Vgs1.2Ohm @ 1.7A, 10V360mOhm @ 5.6A, 10V5.2mOhm @ 80A, 10V2.7Ohm @ 1.2A, 10V
Power Dissipation (Max)37W (Tc)84W (Tc)100W (Tc)42W (Tc)
SeriesCoolMOS™ P7CoolMOS™ P7OptiMOS™Automotive, AEC-Q101, CoolMOS™
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Vgs (Max)±20V±20V±20V±20V
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)13A (Tc)90A (Tc)2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V30 nC @ 10 V47 nC @ 10 V1.5 nC @ 10 V
Vgs(th) (Max) @ Id3.5V @ 80µA3.5V @ 280µA4V @ 52µA3.9V @ 250µA
Supplier Device PackagePG-TO252-3PG-TO252-3PG-TO252-3-11D-Pak
Base Product NumberIPD80R1IPD80RIPD80N04IPD80R2
Drain to Source Voltage (Vdss)800 V800 V40 V800 V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
FET Feature----
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds300 pF @ 500 V930 pF @ 500 V3250 pF @ 25 V290 pF @ 100 V

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