IPD65R660CFDATMA1

MOSFET N-CH 650V 6A TO252-3

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RFQ
Specifications
Part Number:IPD65R660CFDATMA1
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 650V 6A TO252-3
RoHs Status:
ROHS3 Compliant
Nkesp Part Number:73D-IPD65R660CFDATMA1
Part Status21928 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:4.5V @ 200µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO252-3
Series:CoolMOS™
Rds On (Max) @ Id, Vgs:660mOhm @ 2.1A, 10V
Power Dissipation (Max):62.5W (Tc)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:615 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Base Product Number:IPD65R660
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In stock: 21928 pcs

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Product Comparison

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Rds On (Max) @ Id, Vgs----
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Input Capacitance (Ciss) (Max) @ Vds----
Gate Charge (Qg) (Max) @ Vgs----
Vgs(th) (Max) @ Id----
Package / Case----
Current - Continuous Drain (Id) @ 25°C----
Vgs (Max)----
Supplier Device Package----
Series-***
Drive Voltage (Max Rds On, Min Rds On)----
Mounting Type----
Base Product Number----
FET Type----
Package-BulkBulkBulk
Technology----
Drain to Source Voltage (Vdss)----
Operating Temperature----

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