In stock: 40205 pcs
| Part Number |
IPD50R800CEAUMA1
|
IPD600N25N3GATMA1
 |
IPD50R500CEAUMA1
|
IPD50R500CEBTMA1
|
|
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | |
| Drive Voltage (Max Rds On, Min Rds On) | 13V | 10V | 13V | 13V | |
| Supplier Device Package | PG-TO252-2 | PG-TO252-3 | PG-TO252-3 | PG-TO252-3-11 | |
| Package | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 100 V | 2350 pF @ 100 V | 433 pF @ 100 V | 433 pF @ 100 V | |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) | 25A (Tc) | 7.6A (Tc) | 7.6A (Tc) | |
| FET Feature | - | - | - | - | |
| Power Dissipation (Max) | 60W (Tc) | 136W (Tc) | 57W (Tc) | 57W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | |
| Gate Charge (Qg) (Max) @ Vgs | 12.4 nC @ 10 V | 29 nC @ 10 V | 18.7 nC @ 10 V | 18.7 nC @ 10 V | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 500 V | 250 V | 500 V | 500 V | |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 1.5A, 13V | 60mOhm @ 25A, 10V | 500mOhm @ 2.3A, 13V | 500mOhm @ 2.3A, 13V | |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | |
| Vgs(th) (Max) @ Id | 3.5V @ 130µA | 4V @ 90µA | 3.5V @ 200µA | 3.5V @ 200µA | |
| Series | CoolMOS™ CE | OptiMOS™ | CoolMOS™ CE | CoolMOS™ CE | |
| Base Product Number | IPD50R800 | IPD600 | IPD50R500 | IPD50R |
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