IPD50N04S408ATMA1

MOSFET N-CH 40V 50A TO252-3

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Specifications
Part Number:IPD50N04S408ATMA1
Manufacturer:Infineon Technologies
Description:MOSFET N-CH 40V 50A TO252-3
RoHs Status:
Nkesp Part Number:73D-IPD50N04S408ATMA1
Part Status32018 pcs
Manufacturer:Infineon Technologies
Vgs(th) (Max) @ Id:4V @ 17µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO252-3-313
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:7.9mOhm @ 50A, 10V
Power Dissipation (Max):46W (Tc)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1780 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs:22.4 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Base Product Number:IPD50
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In stock: 32018 pcs

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Product Comparison

Part Number IPD50N04S408ATMA1
IPD50N04S408ATMA1
IPD50N03S2-07
IPD50N03S2-07
IPD50N06S2L13ATMA1
IPD50N06S2L13ATMA1
IPD50N04S308ATMA1
IPD50N04S308ATMA1
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInternational Rectifier
Base Product NumberIPD50IPD50IPD50IPD50
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Drive Voltage (Max Rds On, Min Rds On)10V10V4.5V, 10V10V
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds1780 pF @ 6 V2000 pF @ 25 V1800 pF @ 25 V2350 pF @ 25 V
Supplier Device PackagePG-TO252-3-313PG-TO252-3-1PG-TO252-3-11PG-TO252-3
Rds On (Max) @ Id, Vgs7.9mOhm @ 50A, 10V7.3mOhm @ 50A, 10V12.7mOhm @ 34A, 10V7.5mOhm @ 50A, 10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V30 V55 V40 V
FET Feature----
Power Dissipation (Max)46W (Tc)136W (Tc)136W (Tc)68W (Tc)
Vgs(th) (Max) @ Id4V @ 17µA4V @ 85µA2V @ 80µA4V @ 40µA
PackageTape & Reel (TR)BulkTape & Reel (TR)Bulk
SeriesOptiMOS™OptiMOS™OptiMOS™OptiMOS™
Vgs (Max)±20V±20V±20V±20V
Current - Continuous Drain (Id) @ 25°C50A (Tc)50A (Tc)50A (Tc)50A (Tc)
Gate Charge (Qg) (Max) @ Vgs22.4 nC @ 10 V68 nC @ 10 V69 nC @ 10 V35 nC @ 10 V

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