IPD160N04LG

N-CHANNEL POWER MOSFET

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RFQ
Specifications
Part Number:IPD160N04LG
Manufacturer:Infineon Technologies
Description:N-CHANNEL POWER MOSFET
RoHs Status:
Nkesp Part Number:73D-IPD160N04LG
Part Status3487 pcs
Manufacturer:Infineon Technologies
Vgs(th) (Max) @ Id:2V @ 10µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO252-3
Series:OptiMOS® 3
Rds On (Max) @ Id, Vgs:16mOhm @ 30A, 10V
Power Dissipation (Max):31W (Tc)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Package:Bulk
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)

In stock: 3487 pcs

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Product Comparison

Part Number IPD160N04LG
IPD160N04LG
IPD15N06S2L64ATMA2
IPD15N06S2L64ATMA2
IPD180N10N3GATMA1
IPD180N10N3GATMA1
IPD15N06S2L64ATMA1
IPD15N06S2L64ATMA1
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Vgs(th) (Max) @ Id2V @ 10µA2V @ 14µA3.5V @ 33µA2V @ 14µA
Current - Continuous Drain (Id) @ 25°C30A (Tc)19A (Tc)43A (Tc)19A (Tc)
Vgs (Max)±20V±20V±20V±20V
SeriesOptiMOS® 3Automotive, AEC-Q101, OptiMOS™OptiMOS™OptiMOS™
FET Feature----
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V6V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs16mOhm @ 30A, 10V64mOhm @ 13A, 10V18mOhm @ 33A, 10V64mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 20 V354 pF @ 25 V1800 pF @ 50 V354 pF @ 25 V
Power Dissipation (Max)31W (Tc)47W (Tc)71W (Tc)47W (Tc)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Drain to Source Voltage (Vdss)40 V55 V100 V55 V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
PackageBulkTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V13 nC @ 10 V25 nC @ 10 V13 nC @ 10 V
Supplier Device PackagePG-TO252-3PG-TO252-3-11PG-TO252-3PG-TO252-3-11

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