IPD053N06NATMA1

MOSFET N-CH 60V 18A/45A TO252-3

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Part Number:IPD053N06NATMA1
Manufacturer:Infineon Technologies
Description:MOSFET N-CH 60V 18A/45A TO252-3
RoHs Status:
Nkesp Part Number:73D-IPD053N06NATMA1
Part Status23454 pcs
Manufacturer:Infineon Technologies
Vgs(th) (Max) @ Id:2.8V @ 36µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO252-3
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:5.3mOhm @ 45A, 10V
Power Dissipation (Max):3W (Ta), 83W (Tc)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:2000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta), 45A (Tc)
Base Product Number:IPD053
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In stock: 23454 pcs

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Product Comparison

Part Number IPD053N06NATMA1
IPD053N06NATMA1
IPD05N03LA G
IPD05N03LA G
IPD055N08NF2SATMA1
IPD055N08NF2SATMA1
IPD053N08NF2SATMA1
IPD053N08NF2SATMA1
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Drive Voltage (Max Rds On, Min Rds On)6V, 10V4.5V, 10V6V, 10V-
FET TypeN-ChannelN-ChannelN-Channel-
Drain to Source Voltage (Vdss)60 V25 V80 V-
SeriesOptiMOS™OptiMOS™StrongIRFET™ 2-
Rds On (Max) @ Id, Vgs5.3mOhm @ 45A, 10V5.1mOhm @ 30A, 10V5.5mOhm @ 60A, 10V-
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V25 nC @ 5 V54 nC @ 10 V-
Vgs (Max)±20V±20V±20V-
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-
Base Product NumberIPD053IPD05N--
Supplier Device PackagePG-TO252-3PG-TO252-3-11PG-TO252-3-
Power Dissipation (Max)3W (Ta), 83W (Tc)94W (Tc)3W (Ta), 107W (Tc)-
Mounting TypeSurface MountSurface MountSurface Mount-
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63-
Input Capacitance (Ciss) (Max) @ Vds2000 pF @ 30 V3110 pF @ 15 V2500 pF @ 40 V-
Current - Continuous Drain (Id) @ 25°C18A (Ta), 45A (Tc)50A (Tc)17A (Ta), 98A (Tc)-
FET Feature----
PackageTape & Reel (TR)Tape & Reel (TR)Cut Tape (CT)-
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)-
Vgs(th) (Max) @ Id2.8V @ 36µA2V @ 50µA3.8V @ 55µA-

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