In stock: 4081 pcs
| Part Number |
IPB70N10SL16ATMA1
|
IPB79CN10N G
 |
IPB65R600C6ATMA1
 |
IPB77N06S212ATMA1
|
|
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | |
| Power Dissipation (Max) | 250W (Tc) | 31W (Tc) | 63W (Tc) | 158W (Tc) | |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) | 13A (Tc) | 7.3A (Tc) | 77A (Tc) | |
| Package | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V | 11 nC @ 10 V | 23 nC @ 10 V | 60 nC @ 10 V | |
| Drain to Source Voltage (Vdss) | 100 V | 100 V | 650 V | 55 V | |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 4540 pF @ 25 V | 716 pF @ 50 V | 440 pF @ 100 V | 1770 pF @ 25 V | |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | |
| FET Feature | - | - | - | - | |
| Vgs(th) (Max) @ Id | 2V @ 2mA | 4V @ 12µA | 3.5V @ 210µA | 4V @ 93µA | |
| Base Product Number | IPB70N10 | IPB79C | - | IPB77N | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TO263-3-2 | PG-TO263-3 | PG-TO263-3 | PG-TO263-3-2 | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 50A, 10V | 79mOhm @ 13A, 10V | 600mOhm @ 2.1A, 10V | 11.7mOhm @ 38A, 10V | |
| Series | SIPMOS® | OptiMOS™ | CoolMOS™ | OptiMOS™ | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 10V | 10V | 10V | |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
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