IPB50R250CP

N-CHANNEL POWER MOSFET

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RFQ
Specifications
Part Number:IPB50R250CP
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:N-CHANNEL POWER MOSFET
RoHs Status:
Nkesp Part Number:73D-IPB50R250CP
Part Status4705 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:3.5V @ 520µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO263-3-2
Series:CoolMOS™
Rds On (Max) @ Id, Vgs:250mOhm @ 7.8A, 10V
Power Dissipation (Max):114W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package:Bulk
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1420 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)

In stock: 4705 pcs

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Product Comparison

Part Number IPB50R250CP
IPB50R250CP
IPB50R199CP
IPB50R199CP
IPB47N10SL26ATMA1
IPB47N10SL26ATMA1
IPB50R299CPATMA1
IPB50R299CPATMA1
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs250mOhm @ 7.8A, 10V199mOhm @ 9.9A, 10V26mOhm @ 33A, 10V299mOhm @ 6.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds1420 pF @ 100 V1800 pF @ 100 V2500 pF @ 25 V1190 pF @ 100 V
Power Dissipation (Max)114W (Tc)139W (Tc)175W (Tc)104W (Tc)
FET Feature----
Drain to Source Voltage (Vdss)500 V500 V100 V550 V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Current - Continuous Drain (Id) @ 25°C13A (Tc)17A (Tc)47A (Tc)12A (Tc)
Supplier Device PackagePG-TO263-3-2PG-TO263-3-2PG-TO263-3-2PG-TO263-3-2
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)
Vgs (Max)±20V±20V±20V±20V
SeriesCoolMOS™CoolMOS™SIPMOS®CoolMOS™
Drive Voltage (Max Rds On, Min Rds On)10V-4.5V, 10V10V
PackageBulkBulkTape & Reel (TR)Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs36 nC @ 10 V45 nC @ 10 V135 nC @ 10 V31 nC @ 10 V
Vgs(th) (Max) @ Id3.5V @ 520µA3.5V @ 660µA2V @ 2mA3.5V @ 440µA

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