IPB136N08N3GATMA1

N-CHANNEL POWER MOSFET

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RFQ
Specifications
Part Number:IPB136N08N3GATMA1
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:N-CHANNEL POWER MOSFET
RoHs Status:
Nkesp Part Number:73D-IPB136N08N3GATMA1
Part Status34369 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:3.5V @ 33µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO263-3
Series:OptiMOS™3
Rds On (Max) @ Id, Vgs:13.9mOhm @ 45A, 10V
Power Dissipation (Max):79W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package:Bulk
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1730 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:45A (Tc)

In stock: 34369 pcs

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Product Comparison

Part Number IPB136N08N3GATMA1
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IPB144N12N3GATMA1
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IPB120P04P404ATMA2
IPB120P04P404ATMA2
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Input Capacitance (Ciss) (Max) @ Vds1730 pF @ 40 V3220 pF @ 60 V1043 pF @ 15 V14790 pF @ 25 V
Rds On (Max) @ Id, Vgs13.9mOhm @ 45A, 10V14.4mOhm @ 56A, 10V13.6mOhm @ 30A, 10V3.8mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V49 nC @ 10 V8.3 nC @ 5 V205 nC @ 10 V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss)80 V120 V25 V40 V
FET TypeN-ChannelN-ChannelN-ChannelP-Channel
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
SeriesOptiMOS™3OptiMOS™OptiMOS™Automotive, AEC-Q101, OptiMOS®-P2
Supplier Device PackagePG-TO263-3PG-TO263-3PG-TO263-3-2PG-TO263-3-2
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Power Dissipation (Max)79W (Tc)107W (Tc)46W (Tc)136W (Tc)
PackageBulkTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
FET Feature----
Current - Continuous Drain (Id) @ 25°C45A (Tc)56A (Ta)30A (Tc)120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V10V4.5V, 10V-
Vgs (Max)±20V±20V±20V±20V
Vgs(th) (Max) @ Id3.5V @ 33µA4V @ 61µA2V @ 20µA4V @ 340µA

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