IPB123N10N3GATMA1

MOSFET N-CH 100V 58A D2PAK

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Specifications
Part Number:IPB123N10N3GATMA1
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 100V 58A D2PAK
RoHs Status:
Nkesp Part Number:73D-IPB123N10N3GATMA1
Part Status23069 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:3.5V @ 46µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO263-3
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:12.3mOhm @ 46A, 10V
Power Dissipation (Max):94W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:58A (Tc)
Base Product Number:IPB123
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In stock: 23069 pcs

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Product Comparison

Part Number IPB123N10N3GATMA1
IPB123N10N3GATMA1
IPB136N08N3 G
IPB136N08N3 G
IPB120N10S405ATMA1
IPB120N10S405ATMA1
IPB13N03LB G
IPB13N03LB G
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Current - Continuous Drain (Id) @ 25°C58A (Tc)45A (Tc)120A (Tc)30A (Tc)
Vgs (Max)±20V±20V±20V±20V
FET Feature----
Base Product NumberIPB123IPB136NIPB120IPB13N
Drive Voltage (Max Rds On, Min Rds On)6V, 10V6V, 10V10V4.5V, 10V
Supplier Device PackagePG-TO263-3PG-TO263-3PG-TO263-3PG-TO263-3
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Power Dissipation (Max)94W (Tc)79W (Tc)190W (Tc)52W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
SeriesOptiMOS™OptiMOS™Automotive, AEC-Q101, OptiMOS™OptiMOS™
Rds On (Max) @ Id, Vgs12.3mOhm @ 46A, 10V13.6mOhm @ 45A, 10V5mOhm @ 100A, 10V12.5mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 50 V1730 pF @ 40 V6540 pF @ 25 V1355 pF @ 15 V
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Drain to Source Voltage (Vdss)100 V80 V100 V30 V
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V25 nC @ 10 V91 nC @ 10 V11 nC @ 5 V
Vgs(th) (Max) @ Id3.5V @ 46µA3.5V @ 33µA3.5V @ 120µA2V @ 20µA

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