IPB08CNE8N G

MOSFET N-CH 85V 95A D2PAK

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Part Number:IPB08CNE8N G
Manufacturer:Infineon Technologies
Description:MOSFET N-CH 85V 95A D2PAK
Nkesp Part Number:73D-IPB08CNE8N G
Part Status3922 pcs
Manufacturer:Infineon Technologies
Vgs(th) (Max) @ Id:4V @ 130µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO263-3
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:8.2mOhm @ 95A, 10V
Power Dissipation (Max):167W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:6690 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs:99 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):85 V
Current - Continuous Drain (Id) @ 25°C:95A (Tc)
Base Product Number:IPB08C
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In stock: 3922 pcs

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Product Comparison

Part Number IPB08CNE8N G
IPB08CNE8N G
IPB080N03LG
IPB080N03LG
IPB096N03LG
IPB096N03LG
IPB093N04LGATMA1
IPB093N04LGATMA1
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
FET Feature----
Rds On (Max) @ Id, Vgs8.2mOhm @ 95A, 10V8mOhm @ 30A, 10V9.6mOhm @ 30A, 10V9.3mOhm @ 50A, 10V
PackageTape & Reel (TR)BulkBulkTape & Reel (TR)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge (Qg) (Max) @ Vgs99 nC @ 10 V18 nC @ 10 V15 nC @ 10 V28 nC @ 10 V
Vgs(th) (Max) @ Id4V @ 130µA2.2V @ 250µA2.2V @ 250µA2V @ 16µA
SeriesOptiMOS™OptiMOS™3OptiMOS™3OptiMOS™
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Supplier Device PackagePG-TO263-3PG-TO263-3-2PG-TO263-3PG-TO263-3
Base Product NumberIPB08C--IPB093N
Drive Voltage (Max Rds On, Min Rds On)10V4.5V, 10V4.5V, 10V4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds6690 pF @ 40 V1900 pF @ 15 V1600 pF @ 15 V2100 pF @ 20 V
Current - Continuous Drain (Id) @ 25°C95A (Tc)50A35A (Tc)50A (Tc)
Power Dissipation (Max)167W (Tc)47W (Tc)42W (Tc)47W (Tc)
Vgs (Max)±20V±20V±20V±20V
Drain to Source Voltage (Vdss)85 V30 V30 V40 V

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