IPB049N08N5ATMA1

MOSFET N-CH 80V 80A D2PAK

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Part Number:IPB049N08N5ATMA1
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 80V 80A D2PAK
RoHs Status:
Nkesp Part Number:73D-IPB049N08N5ATMA1
Part Status14204 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:3.8V @ 66µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO263-3
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:4.9mOhm @ 80A, 10V
Power Dissipation (Max):125W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:3770 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs:53 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Base Product Number:IPB049
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In stock: 14204 pcs

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Product Comparison

Part Number IPB049N08N5ATMA1
IPB049N08N5ATMA1
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IPB04N03LB
IPB04N03LAT
IPB04N03LAT
IPB048N06LGATMA1
IPB048N06LGATMA1
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Base Product NumberIPB049IPB04NIPB04NIPB048N
Drive Voltage (Max Rds On, Min Rds On)6V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
Current - Continuous Drain (Id) @ 25°C80A (Tc)80A (Tc)80A (Tc)100A (Tc)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs53 nC @ 10 V40 nC @ 5 V32 nC @ 5 V225 nC @ 10 V
Supplier Device PackagePG-TO263-3PG-TO263-3PG-TO263-3-2PG-TO263-3
Rds On (Max) @ Id, Vgs4.9mOhm @ 80A, 10V3.5mOhm @ 55A, 10V3.9mOhm @ 55A, 10V4.4mOhm @ 100A, 10V
FET Feature----
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Power Dissipation (Max)125W (Tc)107W (Tc)107W (Tc)300W (Tc)
Vgs (Max)±20V±20V±20V±20V
SeriesOptiMOS™OptiMOS™OptiMOS™OptiMOS™
Vgs(th) (Max) @ Id3.8V @ 66µA2V @ 70µA2V @ 60µA2V @ 270µA
Drain to Source Voltage (Vdss)80 V30 V25 V60 V
Input Capacitance (Ciss) (Max) @ Vds3770 pF @ 40 V5203 pF @ 15 V3877 pF @ 15 V7600 pF @ 30 V

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