IPB039N10N3GE8197ATMA1

N-CHANNEL POWER MOSFET

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RFQ
Specifications
Part Number:IPB039N10N3GE8197ATMA1
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:N-CHANNEL POWER MOSFET
Nkesp Part Number:73D-IPB039N10N3GE8197ATMA1
Part Status4391 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:3.5V @ 160µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO263-7-3
Series:OptiMOS™ 3
Rds On (Max) @ Id, Vgs:3.9mOhm @ 100A, 10V
Power Dissipation (Max):214W (Tc)
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
Package:Bulk
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:8410 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs:117 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:160A (Tc)

In stock: 4391 pcs

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Product Comparison

Part Number IPB039N10N3GE8197ATMA1
IPB039N10N3GE8197ATMA1
IPB038N12N3GATMA1
IPB038N12N3GATMA1
IPB035N08N3GATMA1
IPB035N08N3GATMA1
IPB040N08NF2SATMA1
IPB040N08NF2SATMA1
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Rds On (Max) @ Id, Vgs3.9mOhm @ 100A, 10V3.8mOhm @ 100A, 10V3.5mOhm @ 100A, 10V4mOhm @ 80A, 10V
Power Dissipation (Max)214W (Tc)300W (Tc)214W (Tc)150W (Tc)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs117 nC @ 10 V211 nC @ 10 V117 nC @ 10 V81 nC @ 10 V
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)TO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drive Voltage (Max Rds On, Min Rds On)6V, 10V10V6V, 10V6V, 10V
Vgs (Max)±20V±20V±20V±20V
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
SeriesOptiMOS™ 3OptiMOS™OptiMOS™StrongIRFET™ 2
Vgs(th) (Max) @ Id3.5V @ 160µA4V @ 270µA3.5V @ 155µA3.8V @ 85µA
FET Feature----
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
PackageBulkTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Drain to Source Voltage (Vdss)100 V120 V80 V50 V
Current - Continuous Drain (Id) @ 25°C160A (Tc)120A (Tc)100A (Tc)107A (Tc)
Supplier Device PackagePG-TO263-7-3PG-TO263-3PG-TO263-3PG-TO263-3
Input Capacitance (Ciss) (Max) @ Vds8410 pF @ 50 V13800 pF @ 60 V8110 pF @ 40 V3800 pF @ 40 V

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