In stock: 10123 pcs
| Part Number |
IPB035N08N3GATMA1
|
IPB039N10N3GE8187ATMA1
 |
IPB035N08N3 G
 |
IPB039N04LGATMA1
 |
|
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | |
| Series | OptiMOS™ | OptiMOS™ | OptiMOS™ | OptiMOS™ | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-7, D²Pak (6 Leads + Tab) | - | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V | 117 nC @ 10 V | 3.5V @ 155µA | 78 nC @ 10 V | |
| Vgs(th) (Max) @ Id | 3.5V @ 155µA | 3.5V @ 160µA | 3.5 mOhm @ 100A, 10V | 2V @ 45µA | |
| Supplier Device Package | PG-TO263-3 | PG-TO263-7 | - | PG-TO263-3 | |
| FET Feature | - | - | N-Channel | - | |
| Power Dissipation (Max) | 214W (Tc) | 214W (Tc) | - | 94W (Tc) | |
| Package | Tape & Reel (TR) | Tape & Reel (TR) | - | Tape & Reel (TR) | |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 100A, 10V | 3.9mOhm @ 100A, 10V | 100A (Tc) | 3.9mOhm @ 80A, 10V | |
| FET Type | N-Channel | N-Channel | - | N-Channel | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | |
| Base Product Number | IPB035 | IPB039 | - | IPB039N | |
| Vgs (Max) | ±20V | ±20V | 6V, 10V | ±20V | |
| Drain to Source Voltage (Vdss) | 80 V | 100 V | - | 40 V | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | 6V, 10V | - | 4.5V, 10V | |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | 160A (Tc) | 80V | 80A (Tc) | |
| Input Capacitance (Ciss) (Max) @ Vds | 8110 pF @ 40 V | 8410 pF @ 50 V | 117nC @ 10V | 6100 pF @ 25 V |
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