IPB034N03LGATMA1

MOSFET N-CH 30V 80A D2PAK

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Part Number:IPB034N03LGATMA1
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 30V 80A D2PAK
RoHs Status:
Nkesp Part Number:73D-IPB034N03LGATMA1
Part Status3863 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:2.2V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO263-3
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:3.4mOhm @ 30A, 10V
Power Dissipation (Max):94W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:5300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs:51 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Base Product Number:IPB034
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In stock: 3863 pcs

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Product Comparison

Part Number IPB034N03LGATMA1
IPB034N03LGATMA1
IPB034N06N3G
IPB034N06N3G
IPB031NE7N3 G
IPB031NE7N3 G
IPB035N08N3GATMA1
IPB035N08N3GATMA1
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Drain to Source Voltage (Vdss)30 V60 V75 V80 V
Supplier Device PackagePG-TO263-3PG-TO263-7-3PG-TO263-3-2PG-TO263-3
Input Capacitance (Ciss) (Max) @ Vds5300 pF @ 15 V11000 pF @ 30 V8130 pF @ 37.5 V8110 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs51 nC @ 10 V130 nC @ 10 V117 nC @ 10 V117 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)100A (Tc)100A (Tc)100A (Tc)
Vgs (Max)±20V±20V±20V±20V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Vgs(th) (Max) @ Id2.2V @ 250µA4V @ 93µA3.8V @ 155µA3.5V @ 155µA
SeriesOptiMOS™OptiMOS™ 3OptiMOS™ 3OptiMOS™
FET Feature----
PackageTape & Reel (TR)BulkBulkTape & Reel (TR)
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-7, D²Pak (6 Leads + Tab)TO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Base Product NumberIPB034--IPB035
Power Dissipation (Max)94W (Tc)167W (Tc)214W (Tc)214W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V10V10V6V, 10V
Rds On (Max) @ Id, Vgs3.4mOhm @ 30A, 10V3.4mOhm @ 100A, 10V3.1mOhm @ 100A, 10V3.5mOhm @ 100A, 10V

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