IPB031NE7N3GATMA1

MOSFET N-CH 75V 100A TO263-3

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Specifications
Part Number:IPB031NE7N3GATMA1
Manufacturer:Infineon Technologies
Description:MOSFET N-CH 75V 100A TO263-3
RoHs Status:
Nkesp Part Number:73D-IPB031NE7N3GATMA1
Part Status3859 pcs
Manufacturer:Infineon Technologies
Vgs(th) (Max) @ Id:3.8V @ 155µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO263-3-2
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:3.1mOhm @ 100A, 10V
Power Dissipation (Max):214W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:8130 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs:117 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Base Product Number:IPB031
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In stock: 3859 pcs

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Product Comparison

Part Number IPB031NE7N3GATMA1
IPB031NE7N3GATMA1
IPB026N10NF2SATMA1
IPB026N10NF2SATMA1
IPB034N06L3GATMA1
IPB034N06L3GATMA1
IPB034N06N3G
IPB034N06N3G
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Input Capacitance (Ciss) (Max) @ Vds8130 pF @ 37.5 V7300 pF @ 50 V13000 pF @ 30 V11000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs117 nC @ 10 V154 nC @ 10 V79 nC @ 4.5 V130 nC @ 10 V
Drain to Source Voltage (Vdss)75 V100 V60 V60 V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Base Product NumberIPB031IPB026NIPB034-
Current - Continuous Drain (Id) @ 25°C100A (Tc)162A (Tc)90A (Tc)100A (Tc)
Power Dissipation (Max)214W (Tc)250W (Tc)167W (Tc)167W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Vgs (Max)±20V±20V±20V±20V
Supplier Device PackagePG-TO263-3-2PG-TO263-3PG-TO263-3PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On)10V6V, 10V4.5V, 10V10V
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Bulk
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
SeriesOptiMOS™StrongIRFET™ 2OptiMOS™OptiMOS™ 3
Vgs(th) (Max) @ Id3.8V @ 155µA3.8V @ 169µA2.2V @ 93µA4V @ 93µA
Rds On (Max) @ Id, Vgs3.1mOhm @ 100A, 10V2.65mOhm @ 100A, 10V3.4mOhm @ 90A, 10V3.4mOhm @ 100A, 10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
FET Feature----
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-7, D²Pak (6 Leads + Tab)

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