IPB025N08N3 G

N-CHANNEL POWER MOSFET

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RFQ
Specifications
Part Number:IPB025N08N3 G
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:N-CHANNEL POWER MOSFET
Nkesp Part Number:73D-IPB025N08N3 G
Part Status3363 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:-
Vgs (Max):-
Technology:-
Supplier Device Package:-
Rds On (Max) @ Id, Vgs:-
Power Dissipation (Max):-
Package / Case:-
Operating Temperature:-
Mounting Type:-
Input Capacitance (Ciss) (Max) @ Vds:-
Gate Charge (Qg) (Max) @ Vgs:-
FET Type:-
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):-
Drain to Source Voltage (Vdss):-
Current - Continuous Drain (Id) @ 25°C:-

In stock: 3363 pcs

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Product Comparison

Part Number IPB025N08N3 G
IPB025N08N3 G
IPB025N08N3GATMA1
IPB025N08N3GATMA1
IPB023N04NGATMA1
IPB023N04NGATMA1
IPB023N06N3GATMA1
IPB023N06N3GATMA1
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Mounting Type-Surface MountSurface MountSurface Mount
FET Feature----
Package / Case-TO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-7, D²Pak (6 Leads + Tab)
Gate Charge (Qg) (Max) @ Vgs-206 nC @ 10 V120 nC @ 10 V198 nC @ 10 V
Vgs(th) (Max) @ Id-3.5V @ 270µA4V @ 95µA4V @ 141µA
Operating Temperature--55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs-2.5mOhm @ 100A, 10V2.3mOhm @ 90A, 10V2.3mOhm @ 100A, 10V
Power Dissipation (Max)-300W (Tc)167W (Tc)214W (Tc)
Vgs (Max)-±20V±20V±20V
Current - Continuous Drain (Id) @ 25°C-120A (Tc)90A (Tc)140A (Tc)
Technology-MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
FET Type-N-ChannelN-ChannelN-Channel
Supplier Device Package-PG-TO263-3PG-TO263-3PG-TO263-7
Drain to Source Voltage (Vdss)-80 V40 V60 V
Input Capacitance (Ciss) (Max) @ Vds-14200 pF @ 40 V10000 pF @ 20 V16000 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)-6V, 10V10V10V

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