IPB024N08N5ATMA1

MOSFET N-CH 80V 120A D2PAK

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Specifications
Part Number:IPB024N08N5ATMA1
Manufacturer:Infineon Technologies
Description:MOSFET N-CH 80V 120A D2PAK
RoHs Status:
Nkesp Part Number:73D-IPB024N08N5ATMA1
Part Status8077 pcs
Manufacturer:Infineon Technologies
Vgs(th) (Max) @ Id:3.8V @ 154µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO263-3
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:2.4mOhm @ 100A, 10V
Power Dissipation (Max):214W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:8970 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs:123 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Base Product Number:IPB024
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In stock: 8077 pcs

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Product Comparison

Part Number IPB024N08N5ATMA1
IPB024N08N5ATMA1
IPB021N06N3G
IPB021N06N3G
IPB023N04NF2SATMA1
IPB023N04NF2SATMA1
IPB024N08NF2SATMA1
IPB024N08NF2SATMA1
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Supplier Device PackagePG-TO263-3PG-TO263-3PG-TO263-3PG-TO263-3
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)80 V60 V40 V80 V
Gate Charge (Qg) (Max) @ Vgs123 nC @ 10 V275 nC @ 10 V102 nC @ 10 V133 nC @ 10 V
Rds On (Max) @ Id, Vgs2.4mOhm @ 100A, 10V2.4mOhm @ 100A, 10V2.35mOhm @ 70A, 10V2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.8V @ 154µA4V @ 196µA3.4V @ 81µA3.8V @ 85µA
Base Product NumberIPB024-IPB023IPB024N
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Power Dissipation (Max)214W (Tc)250W (Tc)3.8W (Ta), 150W (Tc)150W (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V10V6V, 10V6V, 10V
PackageTape & Reel (TR)BulkTape & Reel (TR)Tape & Reel (TR)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
FET Feature----
Current - Continuous Drain (Id) @ 25°C120A (Tc)120A (Tc)30A (Ta), 122A (Tc)107A (Tc)
SeriesOptiMOS™OptiMOS™ 3StrongIRFET™2StrongIRFET™ 2
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs (Max)±20V±20V±20V±20V
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds8970 pF @ 40 V23000 pF @ 30 V4800 pF @ 20 V6200 pF @ 40 V

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