IPA90R500C3XKSA2

MOSFET N-CH 900V 11A TO220

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Specifications
Part Number:IPA90R500C3XKSA2
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 900V 11A TO220
RoHs Status:
Nkesp Part Number:73D-IPA90R500C3XKSA2
Part Status13918 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:3.5V @ 740µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO220-FP
Series:CoolMOS™
Rds On (Max) @ Id, Vgs:500mOhm @ 6.6A, 10V
Power Dissipation (Max):34W (Tc)
Package / Case:TO-220-3 Full Pack
Package:Tube
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs:68 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Base Product Number:IPA90R500

In stock: 13918 pcs

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Product Comparison

Part Number IPA90R500C3XKSA2
IPA90R500C3XKSA2
IPA90R800C3XKSA1
IPA90R800C3XKSA1
IPA80R650CEXKSA2
IPA80R650CEXKSA2
IPA90R800C3XKSA2
IPA90R800C3XKSA2
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
SeriesCoolMOS™CoolMOS™CoolMOS™CoolMOS™
Base Product NumberIPA90R500IPA90RIPA80R650IPA90R800
Gate Charge (Qg) (Max) @ Vgs68 nC @ 10 V42 nC @ 10 V45 nC @ 10 V42 nC @ 10 V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds1700 pF @ 100 V1100 pF @ 100 V1100 pF @ 100 V1100 pF @ 100 V
Package / CaseTO-220-3 Full PackTO-220-3 Full PackTO-220-3 Full PackTO-220-3 Full Pack
Current - Continuous Drain (Id) @ 25°C11A (Tc)6.9A (Tc)8A (Ta)6.9A (Tc)
FET Feature----
Supplier Device PackagePG-TO220-FPPG-TO220-FPTO-220-3FPG-TO220-FP
Rds On (Max) @ Id, Vgs500mOhm @ 6.6A, 10V800mOhm @ 4.1A, 10V650mOhm @ 5.1A, 10V800mOhm @ 4.1A, 10V
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Vgs (Max)±20V±20V±20V±20V
Drain to Source Voltage (Vdss)900 V900 V800 V900 V
Power Dissipation (Max)34W (Tc)33W (Tc)33W (Tc)33W (Tc)
Vgs(th) (Max) @ Id3.5V @ 740µA3.5V @ 460µA3.9V @ 470µA3.5V @ 460µA
PackageTubeTubeTubeTube
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)

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