IPA80R1K2P7XKSA1

MOSFET N-CH 800V 4.5A TO220

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Specifications
Part Number:IPA80R1K2P7XKSA1
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 800V 4.5A TO220
RoHs Status:
Nkesp Part Number:73D-IPA80R1K2P7XKSA1
Part Status28381 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:3.5V @ 80µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO220-3-FP
Series:CoolMOS™ P7
Rds On (Max) @ Id, Vgs:1.2Ohm @ 1.7A, 10V
Power Dissipation (Max):25W (Tc)
Package / Case:TO-220-3 Full Pack
Package:Tube
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:300 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
Base Product Number:IPA80R1
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In stock: 28381 pcs

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Data sheet

Product Comparison

Part Number IPA80R1K2P7XKSA1
IPA80R1K2P7XKSA1
IPA70R450P7SXKSA1
IPA70R450P7SXKSA1
IPA80R1K4P7
IPA80R1K4P7
IPA80R1K4P7XKSA1
IPA80R1K4P7XKSA1
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Base Product NumberIPA80R1IPA70R450-IPA80R1
Power Dissipation (Max)25W (Tc)22.7W (Tc)24W (Tc)24W (Tc)
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Drain to Source Voltage (Vdss)800 V700 V800 V800 V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Supplier Device PackagePG-TO220-3-FPPG-TO220-FPPG-TO220-3-31 Full PackPG-TO220-3-31
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Rds On (Max) @ Id, Vgs1.2Ohm @ 1.7A, 10V450mOhm @ 2.3A, 10V1.4Ohm @ 1.4A, 10V1.4Ohm @ 1.4A, 10V
Package / CaseTO-220-3 Full PackTO-220-3 Full PackTO-220-3 Full PackTO-220-3 Full Pack
SeriesCoolMOS™ P7CoolMOS™ P7CoolMOS™CoolMOS™
Vgs (Max)±20V±16V±20V±20V
Operating Temperature-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
PackageTubeTubeBulkTube
Input Capacitance (Ciss) (Max) @ Vds300 pF @ 500 V424 pF @ 400 V250 pF @ 500 V250 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V13.1 nC @ 400 V10 nC @ 10 V10 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)10A (Tc)4A (Tc)4A (Tc)
Vgs(th) (Max) @ Id3.5V @ 80µA3.5V @ 120µA3.5V @ 70µA3.5V @ 700µA
FET Feature----

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