IPA65R420CFDXKSA1

MOSFET N-CH 650V 8.7A TO220

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Part Number:IPA65R420CFDXKSA1
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 650V 8.7A TO220
RoHs Status:
Nkesp Part Number:73D-IPA65R420CFDXKSA1
Part Status20177 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:4.5V @ 340µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO220-3-111
Series:CoolMOS™
Rds On (Max) @ Id, Vgs:420mOhm @ 3.4A, 10V
Power Dissipation (Max):31.2W (Tc)
Package / Case:TO-220-3 Full Pack
Package:Tube
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:870 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:8.7A (Tc)
Base Product Number:IPA65R420
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In stock: 20177 pcs

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Product Comparison

Part Number IPA65R420CFDXKSA1
IPA65R420CFDXKSA1
IPA65R310CFDXKSA2
IPA65R310CFDXKSA2
IPA70R360P7SXKSA1
IPA70R360P7SXKSA1
IPA65R650CEXKSA1
IPA65R650CEXKSA1
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Vgs (Max)±20V±20V±16V±20V
Input Capacitance (Ciss) (Max) @ Vds870 pF @ 100 V1100 pF @ 100 V517 pF @ 400 V440 pF @ 100 V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.5V @ 340µA4.5V @ 400µA3.5V @ 150µA3.5V @ 210µA
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
SeriesCoolMOS™CoolMOS™ CFD2CoolMOS™ P7CoolMOS™ CE
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Supplier Device PackagePG-TO220-3-111PG-TO220-FPPG-TO220 Full PackPG-TO220-3-FP
Rds On (Max) @ Id, Vgs420mOhm @ 3.4A, 10V310mOhm @ 4.4A, 10V360mOhm @ 3A, 10V650mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C8.7A (Tc)11.4A (Tc)12.5A (Tc)7A (Tc)
PackageTubeTubeTubeTube
Drain to Source Voltage (Vdss)650 V650 V700 V650 V
Package / CaseTO-220-3 Full PackTO-220-3 Full PackTO-220-3 Full PackTO-220-3 Full Pack
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
FET Feature----
Gate Charge (Qg) (Max) @ Vgs32 nC @ 10 V41 nC @ 10 V16.4 nC @ 10 V23 nC @ 10 V
Base Product NumberIPA65R420IPA65R310IPA70R360IPA65R650
Power Dissipation (Max)31.2W (Tc)32W (Tc)26.4W (Tc)28W (Tc)

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