IPA60R190P6XKSA1

MOSFET N-CH 600V 20.2A TO220-FP

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Specifications
Part Number:IPA60R190P6XKSA1
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 600V 20.2A TO220-FP
RoHs Status:
Nkesp Part Number:73D-IPA60R190P6XKSA1
Part Status16117 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:4.5V @ 630µ
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO220-FP
Series:CoolMOS™ P6
Rds On (Max) @ Id, Vgs:190mOhm @ 7.6A, 10V
Power Dissipation (Max):34W (Tc)
Package / Case:TO-220-3 Full Pack
Package:Tube
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:1750 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs:37 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20.2A (Tc)
Base Product Number:IPA60R
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In stock: 16117 pcs

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Data sheet

Product Comparison

Part Number IPA60R190P6XKSA1
IPA60R190P6XKSA1
IPA60R180P7XKSA1
IPA60R180P7XKSA1
IPA60R190C6
IPA60R190C6
IPA60R190C6XKSA1
IPA60R190C6XKSA1
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Rds On (Max) @ Id, Vgs190mOhm @ 7.6A, 10V180mOhm @ 5.6A, 10V190mOhm @ 9.5A, 10V190mOhm @ 9.5A, 10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
PackageTubeTubeBulkTube
Vgs (Max)±20V±20V±20V±20V
Current - Continuous Drain (Id) @ 25°C20.2A (Tc)18A (Tc)20.2A (Tc)20.2A (Tc)
Supplier Device PackagePG-TO220-FPPG-TO220 Full PackPG-TO220-3-111PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
SeriesCoolMOS™ P6CoolMOS™ P7CoolMOS™CoolMOS™
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)600 V650 V600 V600 V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Vgs(th) (Max) @ Id4.5V @ 630µ4V @ 280µA3.5V @ 630µA3.5V @ 630µA
Input Capacitance (Ciss) (Max) @ Vds1750 pF @ 100 V1081 pF @ 400 V1400 pF @ 100 V1400 pF @ 100 V
Package / CaseTO-220-3 Full PackTO-220-3 Full PackTO-220-3 Full PackTO-220-3 Full Pack
Base Product NumberIPA60RIPA60R-IPA60R
Power Dissipation (Max)34W (Tc)26W (Tc)34W (Tc)34W (Tc)
FET Feature----
Gate Charge (Qg) (Max) @ Vgs37 nC @ 10 V25 nC @ 10 V63 nC @ 10 V63 nC @ 10 V

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