IMBG65R163M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

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Specifications
Part Number:IMBG65R163M1HXTMA1
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:SILICON CARBIDE MOSFET PG-TO263-
RoHs Status:
Nkesp Part Number:73D-IMBG65R163M1HXTMA1
Part Status5542 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:5.7V @ 1.7mA
Vgs (Max):+23V, -5V
Technology:SiCFET (Silicon Carbide)
Supplier Device Package:PG-TO263-7-12
Series:CoolSIC™ M1
Rds On (Max) @ Id, Vgs:217mOhm @ 5.7A, 18V
Power Dissipation (Max):85W (Tc)
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:320 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 18 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):18V
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Base Product Number:IMBG65R

In stock: 5542 pcs

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Product Comparison

Part Number IMBG65R163M1HXTMA1
IMBG65R163M1HXTMA1
IMBG65R030M1HXTMA1
IMBG65R030M1HXTMA1
IMBG120R220M1HXTMA1
IMBG120R220M1HXTMA1
IMBG120R350M1HXTMA1
IMBG120R350M1HXTMA1
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C17A (Tc)63A (Tc)13A (Tc)4.7A (Tc)
Gate Charge (Qg) (Max) @ Vgs10 nC @ 18 V49 nC @ 18 V9.4 nC @ 18 V5.9 nC @ 18 V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Power Dissipation (Max)85W (Tc)234W (Tc)83W (Tc)65W (Tc)
FET Feature--StandardStandard
Vgs(th) (Max) @ Id5.7V @ 1.7mA5.7V @ 8.8mA5.7V @ 1.6mA5.7V @ 1mA
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CATO-263-8, D²Pak (7 Leads + Tab), TO-263CATO-263-8, D²Pak (7 Leads + Tab), TO-263CATO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Rds On (Max) @ Id, Vgs217mOhm @ 5.7A, 18V42mOhm @ 29.5A, 18V294mOhm @ 4A, 18V468mOhm @ 2A, 18V
SeriesCoolSIC™ M1CoolSiC™CoolSiC™CoolSiC™
Drain to Source Voltage (Vdss)650 V650 V1200 V1200 V
Supplier Device PackagePG-TO263-7-12PG-TO263-7-12PG-TO263-7-12PG-TO263-7-12
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Base Product NumberIMBG65RIMBG65IMBG120IMBG120
Drive Voltage (Max Rds On, Min Rds On)18V18V--
TechnologySiCFET (Silicon Carbide)SiCFET (Silicon Carbide)SiCFET (Silicon Carbide)SiCFET (Silicon Carbide)
Vgs (Max)+23V, -5V+23V, -5V+18V, -15V+18V, -15V
Input Capacitance (Ciss) (Max) @ Vds320 pF @ 400 V1643 pF @ 400 V312 pF @ 800 V196 pF @ 800 V

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