In stock: 3426 pcs
| Part Number |
IMBG120R140M1HXTMA1
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IMBG65R057M1HXTMA1
 |
IMBF170R650M1XTMA1
|
IMBG120R045M1HXTMA1
|
|
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | |
| Technology | SiCFET (Silicon Carbide) | SiCFET (Silicon Carbide) | SiCFET (Silicon Carbide) | SiCFET (Silicon Carbide) | |
| Base Product Number | IMBG120 | IMBG65 | IMBF170 | IMBG120 | |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
| Vgs (Max) | +18V, -15V | +23V, -5V | +20V, -10V | +18V, -15V | |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) | 39A (Tc) | 7.4A (Tc) | 47A (Tc) | |
| Drain to Source Voltage (Vdss) | 1200 V | 650 V | 1700 V | 1200 V | |
| Vgs(th) (Max) @ Id | 5.7V @ 2.5mA | 5.7V @ 5mA | 5.7V @ 1.7mA | 5.7V @ 7.5mA | |
| Package | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | |
| Power Dissipation (Max) | 107W (Tc) | 161W (Tc) | 88W (Tc) | 227W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | |
| Input Capacitance (Ciss) (Max) @ Vds | 491 pF @ 800 V | 930 pF @ 400 V | 422 pF @ 1000 V | 1527 pF @ 800 V | |
| Rds On (Max) @ Id, Vgs | 189mOhm @ 6A, 18V | 74mOhm @ 16.7A, 18V | 650mOhm @ 1.5A, 15V | 63mOhm @ 16A, 18V | |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | |
| Series | CoolSiC™ | CoolSiC™ | CoolSiC™ | CoolSiC™ | |
| FET Feature | Standard | - | - | Standard | |
| Supplier Device Package | PG-TO263-7-12 | PG-TO263-7-12 | PG-TO263-7-13 | PG-TO263-7-12 | |
| Gate Charge (Qg) (Max) @ Vgs | 13.4 nC @ 18 V | 28 nC @ 18 V | 8 nC @ 12 V | 46 nC @ 18 V |
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