IGLR60R260D1XUMA1

GAN HV

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RFQ
Specifications
Part Number:IGLR60R260D1XUMA1
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:GAN HV
RoHs Status:
Nkesp Part Number:73D-IGLR60R260D1XUMA1
Part Status7116 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:1.6V @ 690µA
Vgs (Max):-10V
Technology:GaNFET (Gallium Nitride)
Supplier Device Package:PG-TSON-8-7
Series:CoolGaN™
Rds On (Max) @ Id, Vgs:-
Power Dissipation (Max):52W (Tc)
Package / Case:8-PowerTDFN
Package:Tape & Reel (TR)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:110 pF @ 400 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):-
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10.4A (Tc)

In stock: 7116 pcs

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Product Comparison

Part Number IGLR60R260D1XUMA1
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ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesRenesas
FET Feature----
Rds On (Max) @ Id, Vgs-12.1mOhm @ 62A, 10V500Ohm @ 16mA, 10V920mOhm @ 5A, 10V
Drain to Source Voltage (Vdss)600 V150 V600 V600 V
Operating Temperature-40°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)150°C
Package / Case8-PowerTDFNTO-262-3 Long Leads, I²Pak, TO-262AATO-236-3, SC-59, SOT-23-3TO-220-3 Full Pack
Drive Voltage (Max Rds On, Min Rds On)-10V4.5V, 10V10V
SeriesCoolGaN™HEXFET®SIPMOS®-
Power Dissipation (Max)52W (Tc)375W (Tc)500mW (Ta)30W (Ta)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
TechnologyGaNFET (Gallium Nitride)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs (Max)-10V±20V±20V±30V
PackageTape & Reel (TR)TubeTape & Reel (TR)Bulk
Input Capacitance (Ciss) (Max) @ Vds110 pF @ 400 V5270 pF @ 50 V28 pF @ 25 V1100 pF @ 25 V
Vgs(th) (Max) @ Id1.6V @ 690µA5V @ 250µA2.6V @ 8µA4.5V @ 1mA
Supplier Device PackagePG-TSON-8-7TO-262PG-SOT23TO-220FP
Mounting TypeSurface MountThrough HoleSurface MountThrough Hole
Current - Continuous Drain (Id) @ 25°C10.4A (Tc)195A (Tc)21mA (Ta)10A (Ta)

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