IGLR60R190D1XUMA1

GAN HV

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RFQ
Specifications
Part Number:IGLR60R190D1XUMA1
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:GAN HV
RoHs Status:
Nkesp Part Number:73D-IGLR60R190D1XUMA1
Part Status6788 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:1.6V @ 960µA
Vgs (Max):-10V
Technology:GaNFET (Gallium Nitride)
Supplier Device Package:PG-TSON-8-6
Series:CoolGaN™
Rds On (Max) @ Id, Vgs:-
Power Dissipation (Max):55.5W (Tc)
Package / Case:8-PowerTDFN
Package:Tape & Reel (TR)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:157 pF @ 400 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):-
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:12.8A (Tc)

In stock: 6788 pcs

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Product Comparison

Part Number IGLR60R190D1XUMA1
IGLR60R190D1XUMA1
QS5U26TR
QS5U26TR
BSS119L6433
BSS119L6433
IRL8113L
IRL8113L
ManufacturerInfineon TechnologiesRohm SemiconductorInfineon TechnologiesInfineon Technologies
FET TypeN-ChannelP-ChannelN-ChannelN-Channel
Drive Voltage (Max Rds On, Min Rds On)-2.5V, 4.5V4.5V, 10V4.5V, 10V
Vgs (Max)-10V±12V±20V±20V
SeriesCoolGaN™-SIPMOS®HEXFET®
Vgs(th) (Max) @ Id1.6V @ 960µA2V @ 1mA2.3V @ 50µA2.25V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds157 pF @ 400 V325 pF @ 10 V78 pF @ 25 V2840 pF @ 15 V
Mounting TypeSurface MountSurface MountSurface MountThrough Hole
TechnologyGaNFET (Gallium Nitride)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C12.8A (Tc)1.5A (Ta)170mA (Ta)105A (Tc)
Drain to Source Voltage (Vdss)600 V20 V100 V30 V
PackageTape & Reel (TR)Tape & Reel (TR)BulkTube
Supplier Device PackagePG-TSON-8-6TSMT5PG-SOT23TO-262
Power Dissipation (Max)55.5W (Tc)1.25W (Ta)360mW (Ta)110W (Tc)
Package / Case8-PowerTDFNSOT-23-5 Thin, TSOT-23-5TO-236-3, SC-59, SOT-23-3TO-262-3 Long Leads, I²Pak, TO-262AA
Operating Temperature-40°C ~ 150°C (TJ)150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs-200mOhm @ 1.5A, 4.5V6Ohm @ 170mA, 10V6mOhm @ 21A, 10V
FET Feature-Schottky Diode (Isolated)--

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