IGLD60R070D1AUMA3

GANFET N-CH

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RFQ
Specifications
Part Number:IGLD60R070D1AUMA3
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:GANFET N-CH
RoHs Status:
Nkesp Part Number:73D-IGLD60R070D1AUMA3
Part Status1848 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:1.6V @ 2.6mA
Vgs (Max):-10V
Technology:GaNFET (Gallium Nitride)
Supplier Device Package:PG-LSON-8-1
Series:CoolGaN™
Rds On (Max) @ Id, Vgs:-
Power Dissipation (Max):114W (Tc)
Package / Case:8-LDFN Exposed Pad
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 400 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):-
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:15A (Tc)
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In stock: 1848 pcs

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Data sheet

Product Comparison

Part Number IGLD60R070D1AUMA3
IGLD60R070D1AUMA3
KFJ4B01120L
KFJ4B01120L
IGLR60R190D1XUMA1
IGLR60R190D1XUMA1
AOTL66515
AOTL66515
ManufacturerInfineon TechnologiesNuvoton Technology CorporationInfineon TechnologiesAlpha & Omega Semiconductor Inc.
Power Dissipation (Max)114W (Tc)-55.5W (Tc)10W (Ta), 428W (Tc)
FET TypeN-Channel-N-ChannelN-Channel
Operating Temperature-55°C ~ 150°C (TJ)--40°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)600 V-600 V150 V
Mounting TypeSurface Mount-Surface MountSurface Mount
Supplier Device PackagePG-LSON-8-1-PG-TSON-8-6TOLLA
Drive Voltage (Max Rds On, Min Rds On)---6V, 10V
Input Capacitance (Ciss) (Max) @ Vds380 pF @ 400 V-157 pF @ 400 V16700 pF @ 75 V
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Vgs (Max)-10V--10V±20V
SeriesCoolGaN™*CoolGaN™AlphaSGT™
Current - Continuous Drain (Id) @ 25°C15A (Tc)-12.8A (Tc)30A (Ta), 200A (Tc)
Vgs(th) (Max) @ Id1.6V @ 2.6mA-1.6V @ 960µA3V @ 250µA
FET Feature----
Rds On (Max) @ Id, Vgs---3.9mOhm @ 20A, 10V
Package / Case8-LDFN Exposed Pad-8-PowerTDFN8-PowerSFN
TechnologyGaNFET (Gallium Nitride)-GaNFET (Gallium Nitride)MOSFET (Metal Oxide)

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