HUFA76429D3

MOSFET N-CH 60V 20A IPAK

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RFQ
Specifications
Part Number:HUFA76429D3
Manufacturer:AMI Semiconductor/onsemi
Description:MOSFET N-CH 60V 20A IPAK
RoHs Status:
Nkesp Part Number:73D-HUFA76429D3
Part Status19548 pcs
Manufacturer:AMI Semiconductor/onsemi
Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±16V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I-PAK
Series:UltraFET™
Rds On (Max) @ Id, Vgs:23mOhm @ 20A, 10V
Power Dissipation (Max):110W (Tc)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Package:Tube
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:1480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Base Product Number:HUFA76429
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In stock: 19548 pcs

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Data sheet

Product Comparison

Part Number HUFA76429D3
HUFA76429D3
HUFA76429D3ST
HUFA76429D3ST
HUFA76423S3S
HUFA76423S3S
HUFA76423D3S
HUFA76423D3S
Manufactureronsemionsemionsemionsemi
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)60 V60 V60 V60 V
Base Product NumberHUFA76429HUFA76HUFA76HUFA76
Supplier Device PackageI-PAKTO-252AAD²PAK (TO-263)TO-252AA
Current - Continuous Drain (Id) @ 25°C20A (Tc)20A (Tc)35A (Tc)20A (Tc)
Mounting TypeThrough HoleSurface MountSurface MountSurface Mount
SeriesUltraFET™UltraFET™UltraFET™UltraFET™
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
Vgs (Max)±16V±16V±16V±16V
Package / CaseTO-251-3 Short Leads, IPak, TO-251AATO-252-3, DPak (2 Leads + Tab), SC-63TO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-252-3, DPak (2 Leads + Tab), SC-63
PackageTubeTape & Reel (TR)TubeTube
Input Capacitance (Ciss) (Max) @ Vds1480 pF @ 25 V1480 pF @ 25 V1060 pF @ 25 V1060 pF @ 25 V
Vgs(th) (Max) @ Id3V @ 250µA3V @ 250µA3V @ 250µA3V @ 250µA
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Rds On (Max) @ Id, Vgs23mOhm @ 20A, 10V23mOhm @ 20A, 10V30mOhm @ 35A, 10V32mOhm @ 20A, 10V
FET Feature----
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Power Dissipation (Max)110W (Tc)110W (Tc)85W (Tc)85W (Tc)
Gate Charge (Qg) (Max) @ Vgs46 nC @ 10 V46 nC @ 10 V34 nC @ 10 V34 nC @ 10 V

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