HUF76609D3S

MOSFET N-CH 100V 10A DPAK

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Specifications
Part Number:HUF76609D3S
Manufacturer:Fairchild Semiconductor
Description:MOSFET N-CH 100V 10A DPAK
RoHs Status:
Nkesp Part Number:73D-HUF76609D3S
Part Status46854 pcs
Manufacturer:Fairchild Semiconductor
Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±16V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-252, (D-Pak)
Series:UltraFET™
Rds On (Max) @ Id, Vgs:160mOhm @ 10A, 10V
Power Dissipation (Max):49W (Tc)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Package:Tube
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:425 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)

In stock: 46854 pcs

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Product Comparison

Part Number HUF76609D3S
HUF76609D3S
HUF76619D3S
HUF76619D3S
HUF76445S3S
HUF76445S3S
HUF76609D3S
HUF76609D3S
ManufacturerFairchild SemiconductoronsemiFairchild Semiconductoronsemi
Supplier Device PackageTO-252, (D-Pak)TO-252AAD2PAK (TO-263)TO-252AA
Vgs (Max)±16V±16V±16V±16V
SeriesUltraFET™UltraFET™UltraFET™UltraFET™
Drain to Source Voltage (Vdss)100 V100 V60 V100 V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
PackageTubeTubeTubeTube
Power Dissipation (Max)49W (Tc)75W (Tc)310W (Tc)49W (Tc)
FET Feature----
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
Current - Continuous Drain (Id) @ 25°C10A (Tc)18A (Tc)75A (Tc)10A (Tc)
Gate Charge (Qg) (Max) @ Vgs16 nC @ 10 V29 nC @ 10 V150 nC @ 10 V16 nC @ 10 V
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id3V @ 250µA3V @ 250µA3V @ 250µA3V @ 250µA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63TO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds425 pF @ 25 V767 pF @ 25 V4965 pF @ 25 V425 pF @ 25 V
Rds On (Max) @ Id, Vgs160mOhm @ 10A, 10V85mOhm @ 18A, 10V6.5mOhm @ 75A, 10V160mOhm @ 10A, 10V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)

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