HUF76143P3

N-CHANNEL POWER MOSFET

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RFQ
Specifications
Part Number:HUF76143P3
Manufacturer:Fairchild Semiconductor
Description:N-CHANNEL POWER MOSFET
Nkesp Part Number:73D-HUF76143P3
Part Status21467 pcs
Manufacturer:Fairchild Semiconductor
Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220-3
Series:-
Rds On (Max) @ Id, Vgs:5.5mOhm @ 75A, 10V
Power Dissipation (Max):225W (Tc)
Package / Case:TO-220-3
Package:Bulk
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:3900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:114 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)

In stock: 21467 pcs

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Product Comparison

Part Number HUF76143P3
HUF76143P3
HUF76137S3S
HUF76137S3S
HUF76407D3ST
HUF76407D3ST
HUF76139S3ST
HUF76139S3ST
ManufacturerFairchild SemiconductorHarris CorporationonsemiFairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C75A (Tc)75A (Tc)12A (Tc)75A (Tc)
Drain to Source Voltage (Vdss)30 V30 V60 V30 V
Package / CaseTO-220-3TO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-252-3, DPak (2 Leads + Tab), SC-63TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds3900 pF @ 25 V2100 pF @ 25 V350 pF @ 25 V2700 pF @ 25 V
Operating Temperature-40°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)
PackageBulkBulkTape & Reel (TR)Bulk
Mounting TypeThrough HoleSurface MountSurface MountSurface Mount
Gate Charge (Qg) (Max) @ Vgs114 nC @ 10 V72 nC @ 10 V11.3 nC @ 10 V78 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
FET Feature----
Rds On (Max) @ Id, Vgs5.5mOhm @ 75A, 10V9mOhm @ 75A, 10V92mOhm @ 13A, 10V7.5mOhm @ 75A, 10V
Series--UltraFET-
Power Dissipation (Max)225W (Tc)145W (Tc)38W (Tc)165W (Tc)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Supplier Device PackageTO-220-3D2PAK (TO-263)TO-252AATO-263AB
Vgs(th) (Max) @ Id3V @ 250µA3V @ 250µA3V @ 250µA3V @ 250µA
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs (Max)±20V±16V±16V±20V

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