HP8K22TB

30V NCH+NCH MID POWER MOSFET

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Specifications
Part Number:HP8K22TB
Manufacturer:LAPIS Technology
Description:30V NCH+NCH MID POWER MOSFET
RoHs Status:
Nkesp Part Number:73D-HP8K22TB
Part Status30613 pcs
Manufacturer:LAPIS Technology
Vgs(th) (Max) @ Id:2.5V @ 1mA
Technology:-
Supplier Device Package:8-HSOP
Series:-
Rds On (Max) @ Id, Vgs:4.6mOhm @ 20A, 10V
Power - Max:25W
Package / Case:8-PowerTDFN
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1080pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:16.8nC @ 10V
FET Feature:-
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:27A, 57A
Configuration:2 N-Channel (Half Bridge)
Base Product Number:HP8K22
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In stock: 30613 pcs

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Data sheet

Product Comparison

Part Number HP8K22TB
HP8K22TB
HP8S36TB
HP8S36TB
HP8M31TB1
HP8M31TB1
VWM270-0075X2
VWM270-0075X2
ManufacturerRohm SemiconductorRohm SemiconductorRohm SemiconductorIXYS
Drain to Source Voltage (Vdss)30V30V60V75V
Configuration2 N-Channel (Half Bridge)2 N-Channel (Half Bridge)N and P-Channel6 N-Channel (3-Phase Bridge)
Rds On (Max) @ Id, Vgs4.6mOhm @ 20A, 10V2.4mOhm @ 32A, 10V65mOhm @ 8.5A, 10V, 70mOhm @ 8.5A, 10V2.1mOhm @ 100A, 10V
Input Capacitance (Ciss) (Max) @ Vds1080pF @ 15V6100pF @ 15V470pF @ 30V, 2300pF @ 30V-
Base Product NumberHP8K22HP8S36HP8M31VWM270
Power - Max25W29W3W (Ta)-
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Box
Current - Continuous Drain (Id) @ 25°C27A, 57A27A, 80A8.5A (Ta)270A
Supplier Device Package8-HSOP8-HSOP8-HSOPV2-PAK
Technology--MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Series----
FET Feature----
Gate Charge (Qg) (Max) @ Vgs16.8nC @ 10V47nC @ 4.5V12.3nC @ 10V, 38nC @ 10V360nC @ 10V
Vgs(th) (Max) @ Id2.5V @ 1mA2.5V @ 1mA3V @ 1mA4V @ 500µA
Package / Case8-PowerTDFN8-PowerTDFN8-PowerTDFNV2-PAK
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)150°C (TJ)-40°C ~ 175°C (TJ)
Mounting TypeSurface MountSurface MountSurface MountChassis Mount

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