Name: Goford Semiconductor GT52N10T
Brand: Goford Semiconductor
SKU: GT52N10T
Price: 0.3 USD
Availability: InStock

Specifications: Part Number:GT52N10T; Manufacturer:Goford Semiconductor; Description:N100V,RD(MAX)<9M@10V,RD(MAX)<15M; RoHs Status:; ROHS3 Compliant; Nkesp Part Number:73D-GT52N10T; Part Status45058 pcs

Vgs(th) (Max) @ Id:2.5V @ 250µA

Vgs (Max):±20V

Technology:MOSFET (Metal Oxide)

Supplier Device Package:TO-220

Series:-

Rds On (Max) @ Id, Vgs:9mOhm @ 50A, 10V

Power Dissipation (Max):227W

Package / Case:TO-220-3 Full Pack

Package:Tube

Operating Temperature:-55°C ~ 150°C (TJ)

Mounting Type:Through Hole

Input Capacitance (Ciss) (Max) @ Vds:2626 pF @ 50 V

Gate Charge (Qg) (Max) @ Vgs:44.5 nC @ 10 V

FET Type:N-Channel

Drain to Source Voltage (Vdss):100 V

Current - Continuous Drain (Id) @ 25°C:80A

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In stock: 45058 pcs

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Data sheet

Product Comparison

Part Number	GT52N10D5I	GT52N10D5	GT55N06D5	TK32E12N1,S1X
Manufacturer	Goford Semiconductor	Goford Semiconductor	Goford Semiconductor	Toshiba Semiconductor and Storage
Technology	-	-	-	-
Supplier Device Package	-	-	-	-
Drain to Source Voltage (Vdss)	-	-	-	-
FET Type	-	-	-	-
Vgs (Max)	-	-	-	-
Package / Case	-	-	-	-
Mounting Type	-	-	-	-
Power Dissipation (Max)	-	-	-	-
Gate Charge (Qg) (Max) @ Vgs	-	-	-	-
Operating Temperature	-	-	-	-
Input Capacitance (Ciss) (Max) @ Vds	-	-	-	-
Current - Continuous Drain (Id) @ 25°C	-	-	-	-
Vgs(th) (Max) @ Id	-	-	-	-
Series	-	*	*	*
Rds On (Max) @ Id, Vgs	-	-	-	-
Package	-	Bulk	Bulk	Bulk