GSFC02501

MOSFET, P-CHANNEL, -25V, -0.85A,

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Specifications
Part Number:GSFC02501
Manufacturer:Good-Ark Semiconductor
Description:MOSFET, P-CHANNEL, -25V, -0.85A,
RoHs Status:
Nkesp Part Number:73D-GSFC02501
Part Status477447 pcs
Manufacturer:Good-Ark Semiconductor
Vgs(th) (Max) @ Id:1V @ 250µA
Vgs (Max):±8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-323
Series:-
Rds On (Max) @ Id, Vgs:640mOhm @ 550mA, 4.5V
Power Dissipation (Max):690mW (Ta)
Package / Case:SC-70, SOT-323
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:58 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs:0.8 nC @ 4.5 V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:850mA (Ta)
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In stock: 477447 pcs

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Data sheet

Product Comparison

Part Number GSFC02501
GSFC02501
GSFD0650
GSFD0650
GSFD0646
GSFD0646
GSFD0460
GSFD0460
ManufacturerGood-Ark SemiconductorGood-Ark SemiconductorGood-Ark SemiconductorGood-Ark Semiconductor
Power Dissipation (Max)690mW (Ta)53W (Tc)63W (Tc)62W (Tc)
Gate Charge (Qg) (Max) @ Vgs0.8 nC @ 4.5 V25 nC @ 10 V59 nC @ 10 V32 nC @ 4.5 V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Package / CaseSC-70, SOT-323TO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63
Series----
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Vgs (Max)±8V±20V±20V±20V
Current - Continuous Drain (Id) @ 25°C850mA (Ta)50A (Tc)45A (Tc)60A (Tc)
Supplier Device PackageSOT-323TO-252 (DPAK)TO-252 (DPAK)TO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25 V65 V60 V40 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V4.5V, 10V4.5V, 10V4.5V, 10V
FET Feature----
Vgs(th) (Max) @ Id1V @ 250µA2.5V @ 250µA2.5V @ 250µA2.5V @ 250µA
Rds On (Max) @ Id, Vgs640mOhm @ 550mA, 4.5V8.8mOhm @ 15A, 10V12mOhm @ 10A, 10V6.7mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds58 pF @ 10 V1210 pF @ 30 V3050 pF @ 25 V2500 pF @ 25 V
FET TypeP-ChannelN-ChannelN-ChannelN-Channel

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