GP2M005A060HG

MOSFET N-CH 600V 4.2A TO220

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RFQ
Specifications
Part Number:GP2M005A060HG
Manufacturer:SemiQ
Description:MOSFET N-CH 600V 4.2A TO220
RoHs Status:
Nkesp Part Number:73D-GP2M005A060HG
Part Status3610 pcs
Manufacturer:SemiQ
Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220
Series:-
Rds On (Max) @ Id, Vgs:2.1 Ohm @ 2.1A, 10V
Power Dissipation (Max):98.4W (Tc)
Packaging:Tube
Package / Case:TO-220-3
Other Names:1560-1201-1
1560-1201-1-ND
1560-1201-5
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:658pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:14nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600V
Detailed Description:N-Channel 600V 4.2A (Tc) 98.4W (Tc) Through Hole TO-220
Current - Continuous Drain (Id) @ 25°C:4.2A (Tc)
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In stock: 3610 pcs

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Product Comparison

Part Number GP2M005A060HG
GP2M005A060HG
GP2M008A060PG
GP2M008A060PG
GP2M005A050CG
GP2M005A050CG
GP2M005A060FG
GP2M005A060FG
ManufacturerGlobal Power Technologies GroupGlobal Power Technologies GroupGlobal Power Technologies GroupGlobal Power Technologies Group
Vgs (Max)±30V±30V±30V±30V
FET Feature----
Power Dissipation (Max)98.4W (Tc)120W (Tc)98.4W (Tc)32.8W (Tc)
Current - Continuous Drain (Id) @ 25°C4.2A (Tc)7.5A (Tc)4.5A (Tc)4.2A (Tc)
Drain to Source Voltage (Vdss)600V600V500V600V
Vgs(th) (Max) @ Id5V @ 250µA5V @ 250µA5V @ 250µA5V @ 250µA
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Rds On (Max) @ Id, Vgs2.1 Ohm @ 2.1A, 10V1.2 Ohm @ 3.75A, 10V1.5 Ohm @ 2.25A, 10V2.1 Ohm @ 2.1A, 10V
Gate Charge (Qg) (Max) @ Vgs14nC @ 10V23nC @ 10V15nC @ 10V14nC @ 10V
Moisture Sensitivity Level (MSL)1 (Unlimited)1 (Unlimited)1 (Unlimited)1 (Unlimited)
Mounting TypeThrough HoleThrough HoleSurface MountThrough Hole
Package / CaseTO-220-3TO-251-3 Short Leads, IPak, TO-251AATO-252-3, DPak (2 Leads + Tab), SC-63TO-220-3 Full Pack
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds658pF @ 25V1063pF @ 25V645pF @ 25V658pF @ 25V
Lead Free Status / RoHS StatusLead free / RoHS CompliantLead free / RoHS CompliantLead free / RoHS CompliantLead free / RoHS Compliant
Detailed DescriptionN-Channel 600V 4.2A (Tc) 98.4W (Tc) Through Hole TO-220N-Channel 600V 7.5A (Tc) 120W (Tc) Through Hole I-PAKN-Channel 500V 4.5A (Tc) 98.4W (Tc) Surface Mount D-PakN-Channel 600V 4.2A (Tc) 32.8W (Tc) Through Hole TO-220F
Other Names1560-1201-1
1560-1201-1-ND
1560-1201-5
-1560-1197-11560-1200-1
1560-1200-1-ND
1560-1200-5
PackagingTubeTape & Reel (TR)Cut Tape (CT)Tube
Supplier Device PackageTO-220I-PAKD-PakTO-220F
Series----
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V

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