GP2M004A065HG

MOSFET N-CH 650V 4A TO220

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Specifications
Part Number:GP2M004A065HG
Manufacturer:Global Power Technologies Group
Description:MOSFET N-CH 650V 4A TO220
RoHs Status:
Nkesp Part Number:73D-GP2M004A065HG
Part Status4444 pcs
Manufacturer:Global Power Technologies Group
Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220
Series:-
Rds On (Max) @ Id, Vgs:2.4 Ohm @ 2A, 10V
Power Dissipation (Max):98.4W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-220-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:642pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650V
Detailed Description:N-Channel 650V 4A (Tc) 98.4W (Tc) Through Hole TO-220
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
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In stock: 4444 pcs

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Product Comparison

Part Number GP2M004A065HG
GP2M004A065HG
GP2M002A065PG
GP2M002A065PG
GP2M005A050CG
GP2M005A050CG
GP2M004A065FG
GP2M004A065FG
ManufacturerGlobal Power Technologies GroupGlobal Power Technologies GroupGlobal Power Technologies GroupGlobal Power Technologies Group
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C4A (Tc)1.8A (Tc)4.5A (Tc)4A (Tc)
Series----
Vgs(th) (Max) @ Id5V @ 250µA5V @ 250µA5V @ 250µA5V @ 250µA
Lead Free Status / RoHS StatusLead free / RoHS CompliantLead free / RoHS CompliantLead free / RoHS CompliantLead free / RoHS Compliant
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Power Dissipation (Max)98.4W (Tc)52W (Tc)98.4W (Tc)32.8W (Tc)
Vgs (Max)±30V±30V±30V±30V
FET Feature----
Detailed DescriptionN-Channel 650V 4A (Tc) 98.4W (Tc) Through Hole TO-220N-Channel 650V 1.8A (Tc) 52W (Tc) Through Hole I-PAKN-Channel 500V 4.5A (Tc) 98.4W (Tc) Surface Mount D-PakN-Channel 650V 4A (Tc) 32.8W (Tc) Through Hole TO-220F
PackagingTape & Reel (TR)Tape & Reel (TR)Cut Tape (CT)Tube
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V8.5nC @ 10V15nC @ 10V15nC @ 10V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Moisture Sensitivity Level (MSL)1 (Unlimited)1 (Unlimited)1 (Unlimited)1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds642pF @ 25V353pF @ 25V645pF @ 25V642pF @ 25V
Drain to Source Voltage (Vdss)650V650V500V650V
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Mounting TypeThrough HoleThrough HoleSurface MountThrough Hole
Package / CaseTO-220-3TO-251-3 Short Leads, IPak, TO-251AATO-252-3, DPak (2 Leads + Tab), SC-63TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs2.4 Ohm @ 2A, 10V4.6 Ohm @ 900mA, 10V1.5 Ohm @ 2.25A, 10V2.4 Ohm @ 2A, 10V
Supplier Device PackageTO-220I-PAKD-PakTO-220F

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