GP2M004A065FG

MOSFET N-CH 650V 4A TO220F

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RFQ
Specifications
Part Number:GP2M004A065FG
Manufacturer:SemiQ
Description:MOSFET N-CH 650V 4A TO220F
RoHs Status:
Lead free / RoHS Compliant
Nkesp Part Number:73D-GP2M004A065FG
Part Status3612 pcs
Manufacturer:SemiQ
Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220F
Series:-
Rds On (Max) @ Id, Vgs:2.4 Ohm @ 2A, 10V
Power Dissipation (Max):32.8W (Tc)
Packaging:Tube
Package / Case:TO-220-3 Full Pack
Other Names:1560-1195-1
1560-1195-1-ND
1560-1195-5
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:642pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650V
Detailed Description:N-Channel 650V 4A (Tc) 32.8W (Tc) Through Hole TO-220F
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
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In stock: 3612 pcs

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Product Comparison

Part Number GP2M004A065PG
GP2M004A065PG
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GP2M004A065HG
GP2M004A065CG
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GP2M002A065FG
GP2M002A065FG
ManufacturerGlobal Power Technologies GroupGlobal Power Technologies GroupGlobal Power Technologies GroupGlobal Power Technologies Group
Drive Voltage (Max Rds On, Min Rds On)----
Packaging----
Series-***
Rds On (Max) @ Id, Vgs----
Supplier Device Package----
Moisture Sensitivity Level (MSL)----
Power Dissipation (Max)----
Technology----
Drain to Source Voltage (Vdss)----
Other Names----
Lead Free Status / RoHS Status----
Package / Case----
Input Capacitance (Ciss) (Max) @ Vds----
FET Feature----
Operating Temperature----
Vgs(th) (Max) @ Id----
FET Type----
Gate Charge (Qg) (Max) @ Vgs----
Mounting Type----
Detailed Description----
Current - Continuous Drain (Id) @ 25°C----
Vgs (Max)----

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