GP1M009A090FH

MOSFET N-CH 900V 9A TO220F

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RFQ
Specifications
Part Number:GP1M009A090FH
Manufacturer:SemiQ
Description:MOSFET N-CH 900V 9A TO220F
RoHs Status:
Lead free / RoHS Compliant
Nkesp Part Number:73D-GP1M009A090FH
Part Status4075 pcs
Manufacturer:SemiQ
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220F
Series:-
Rds On (Max) @ Id, Vgs:1.4 Ohm @ 4.5A, 10V
Power Dissipation (Max):48W (Tc)
Packaging:Tube
Package / Case:TO-220-3 Full Pack
Other Names:1560-1173-1
1560-1173-1-ND
1560-1173-5
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2324pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:65nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):900V
Detailed Description:N-Channel 900V 9A (Tc) 48W (Tc) Through Hole TO-220F
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
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In stock: 4075 pcs

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Product Comparison

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ManufacturerGlobal Power Technologies GroupGlobal Power Technologies GroupGlobal Power Technologies GroupGlobal Power Technologies Group
Power Dissipation (Max)----
Drive Voltage (Max Rds On, Min Rds On)----
Mounting Type----
Moisture Sensitivity Level (MSL)----
Detailed Description----
Drain to Source Voltage (Vdss)----
Vgs(th) (Max) @ Id----
Packaging----
FET Feature----
Supplier Device Package----
Lead Free Status / RoHS Status----
Package / Case----
Other Names----
Vgs (Max)----
Rds On (Max) @ Id, Vgs----
Series-***
Current - Continuous Drain (Id) @ 25°C----
Technology----
Operating Temperature----
FET Type----
Input Capacitance (Ciss) (Max) @ Vds----
Gate Charge (Qg) (Max) @ Vgs----

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