In stock: 3449 pcs
| Part Number |
GA50JT12-247
 |
NDC652P
 |
GA50JT06-258
 |
BSS138-D87Z
|
|
|---|---|---|---|---|---|
| Manufacturer | GeneSiC Semiconductor | onsemi | GeneSiC Semiconductor | AMI Semiconductor / ON Semiconductor | |
| Vgs (Max) | - | -20V | - | ±20V | |
| Package | Tube | Tape & Reel (TR) | Bulk | - | |
| Series | - | - | - | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 7209 pF @ 800 V | 290 pF @ 15 V | - | 27pF @ 25V | |
| Operating Temperature | 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 225°C (TJ) | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | Surface Mount | Through Hole | Surface Mount | |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 50A | 110mOhm @ 3.1A, 10V | 25mOhm @ 50A | 3.5 Ohm @ 220mA, 10V | |
| Vgs(th) (Max) @ Id | - | 3V @ 250µA | - | 1.5V @ 1mA | |
| Drive Voltage (Max Rds On, Min Rds On) | - | 4.5V, 10V | - | 4.5V, 10V | |
| FET Feature | - | - | - | - | |
| FET Type | - | P-Channel | - | N-Channel | |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | 2.4A (Ta) | 100A (Tc) | 220mA (Ta) | |
| Power Dissipation (Max) | 583W (Tc) | 1.6W (Ta) | 769W (Tc) | 360mW (Ta) | |
| Supplier Device Package | TO-247AB | SuperSOT™-6 | TO-258 | SOT-23-3 | |
| Drain to Source Voltage (Vdss) | 1200 V | 30 V | 600 V | 50V | |
| Package / Case | TO-247-3 | SOT-23-6 Thin, TSOT-23-6 | TO-258-3, TO-258AA | TO-236-3, SC-59, SOT-23-3 | |
| Technology | SiC (Silicon Carbide Junction Transistor) | MOSFET (Metal Oxide) | SiC (Silicon Carbide Junction Transistor) | MOSFET (Metal Oxide) |
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