In stock: 218927 pcs
| Part Number |
G08N06S
 |
STP45N60DM6
 |
SQJA82EP-T1_GE3
 |
G08N03D2
 |
|
|---|---|---|---|---|---|
| Manufacturer | Goford Semiconductor | STMicroelectronics | Vishay Siliconix | Goford Semiconductor | |
| Supplier Device Package | 8-SOP | TO-220 | PowerPAK® SO-8 | 6-DFN (2x2) | |
| Mounting Type | Surface Mount | Through Hole | Surface Mount | Surface Mount | |
| Package | Tape & Reel (TR) | Tube | Tape & Reel (TR) | Tape & Reel (TR) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 10V | 4.5V, 10V | 4.5V, 10V | |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 3A, 10V | 99mOhm @ 15A, 10V | 8.2mOhm @ 10A, 10V | 20mOhm @ 4A, 10V | |
| Series | G | MDmesh™ DM6 | Automotive, AEC-Q101, TrenchFET® | - | |
| Vgs (Max) | ±20V | ±25V | ±20V | ±20V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | 4.75V @ 250µA | 2.5V @ 250µA | 2V @ 250µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 979 pF @ 30 V | 1920 pF @ 100 V | 3000 pF @ 25 V | 681 pF @ 15 V | |
| FET Feature | - | - | - | - | |
| Drain to Source Voltage (Vdss) | 60 V | 600 V | 80 V | 30 V | |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) | 30A (Tc) | 60A (Tc) | 8A (Tc) | |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V | 44 nC @ 10 V | 60 nC @ 10 V | 15 nC @ 10 V | |
| Power Dissipation (Max) | 2W (Ta) | 210W (Tc) | 68W (Tc) | 17W (Tc) | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | TO-220-3 | PowerPAK® SO-8 | 6-WDFN Exposed Pad | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
We strictly controls the quality of products, environment and services.
Through the ISO certification of the third party. View More >
