FQT1N80TF-WS

MOSFET N-CH 800V 200MA SOT223-3

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Specifications
Part Number:FQT1N80TF-WS
Manufacturer:AMI Semiconductor/onsemi
Description:MOSFET N-CH 800V 200MA SOT223-3
RoHs Status:
Nkesp Part Number:73D-FQT1N80TF-WS
Part Status45989 pcs
Manufacturer:AMI Semiconductor/onsemi
Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-223-3
Series:QFET®
Rds On (Max) @ Id, Vgs:20Ohm @ 100mA, 10V
Power Dissipation (Max):2.1W (Tc)
Package / Case:TO-261-3
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:7.2 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:200mA (Tc)
Base Product Number:FQT1N80
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In stock: 45989 pcs

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Data sheet

Product Comparison

Part Number FQT1N80TF-WS
FQT1N80TF-WS
FQT1N60CTF-WS
FQT1N60CTF-WS
FQT13N06TF
FQT13N06TF
FQT13N06LTF
FQT13N06LTF
Manufactureronsemionsemionsemionsemi
Drive Voltage (Max Rds On, Min Rds On)10V10V10V5V, 10V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs7.2 nC @ 10 V6.2 nC @ 10 V7.5 nC @ 10 V6.4 nC @ 5 V
Vgs (Max)±30V±30V±25V±20V
Power Dissipation (Max)2.1W (Tc)2.1W (Tc)2.1W (Tc)2.1W (Tc)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
SeriesQFET®QFET®QFET®QFET®
Input Capacitance (Ciss) (Max) @ Vds195 pF @ 25 V170 pF @ 25 V310 pF @ 25 V350 pF @ 25 V
Base Product NumberFQT1N80FQT1N60FQT13N06FQT13N06
Package / CaseTO-261-3TO-261-4, TO-261AATO-261-4, TO-261AATO-261-4, TO-261AA
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C200mA (Tc)200mA (Tc)2.8A (Tc)2.8A (Tc)
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
FET Feature----
Drain to Source Voltage (Vdss)800 V600 V60 V60 V
Rds On (Max) @ Id, Vgs20Ohm @ 100mA, 10V11.5Ohm @ 100mA, 10V140mOhm @ 1.4A, 10V110mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id5V @ 250µA4V @ 250µA4V @ 250µA2.5V @ 250µA
Supplier Device PackageSOT-223-3SOT-223-4SOT-223-4SOT-223-4

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