FQPF13N06

MOSFET N-CH 60V 9.4A TO220F

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Specifications
Part Number:FQPF13N06
Manufacturer:AMI Semiconductor/onsemi
Description:MOSFET N-CH 60V 9.4A TO220F
Nkesp Part Number:73D-FQPF13N06
Part Status3913 pcs
Manufacturer:AMI Semiconductor/onsemi
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±25V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220F-3
Series:QFET®
Rds On (Max) @ Id, Vgs:135mOhm @ 4.7A, 10V
Power Dissipation (Max):24W (Tc)
Package / Case:TO-220-3 Full Pack
Package:Tube
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:310 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:9.4A (Tc)
Base Product Number:FQPF1
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In stock: 3913 pcs

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Product Comparison

Part Number FQPF13N06
FQPF13N06
FQPF13N50C
FQPF13N50C
FQPF13N10
FQPF13N10
FQPF12P10
FQPF12P10
ManufactureronsemiFairchild SemiconductorFairchild Semiconductoronsemi
Current - Continuous Drain (Id) @ 25°C9.4A (Tc)13A (Tc)8.7A (Tc)8.2A (Tc)
Package / CaseTO-220-3 Full PackTO-220-3 Full PackTO-220-3 Full PackTO-220-3 Full Pack
Vgs(th) (Max) @ Id4V @ 250µA4V @ 250µA4V @ 250µA4V @ 250µA
Supplier Device PackageTO-220F-3TO-220FTO-220F-3TO-220F-3
Power Dissipation (Max)24W (Tc)48W (Tc)30W (Tc)38W (Tc)
Gate Charge (Qg) (Max) @ Vgs7.5 nC @ 10 V56 nC @ 10 V16 nC @ 10 V27 nC @ 10 V
Base Product NumberFQPF1FQPF1-FQPF1
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Input Capacitance (Ciss) (Max) @ Vds310 pF @ 25 V2055 pF @ 25 V450 pF @ 25 V800 pF @ 25 V
PackageTubeTubeTubeTube
Drain to Source Voltage (Vdss)60 V500 V100 V100 V
Vgs (Max)±25V±30V±25V±30V
Rds On (Max) @ Id, Vgs135mOhm @ 4.7A, 10V480mOhm @ 6.5A, 10V180mOhm @ 4.35A, 10V290mOhm @ 4.1A, 10V
SeriesQFET®QFET®QFET®QFET®
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
FET TypeN-ChannelN-ChannelN-ChannelP-Channel
FET Feature----

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