FQPF12N60

MOSFET N-CH 600V 5.8A TO220F

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Specifications
Part Number:FQPF12N60
Manufacturer:AMI Semiconductor/onsemi
Description:MOSFET N-CH 600V 5.8A TO220F
Nkesp Part Number:73D-FQPF12N60
Part Status3438 pcs
Manufacturer:AMI Semiconductor/onsemi
Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220F-3
Series:QFET®
Rds On (Max) @ Id, Vgs:700mOhm @ 2.9A, 10V
Power Dissipation (Max):55W (Tc)
Package / Case:TO-220-3 Full Pack
Package:Tube
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:54 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Tc)
Base Product Number:FQPF1
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In stock: 3438 pcs

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Product Comparison

Part Number FQPF12N60
FQPF12N60
FQPF11P06
FQPF11P06
FQPF12P20XDTU
FQPF12P20XDTU
FQPF12N60
FQPF12N60
ManufactureronsemionsemiFairchild SemiconductorFairchild Semiconductor
Power Dissipation (Max)55W (Tc)30W (Tc)50W (Tc)55W (Tc)
Input Capacitance (Ciss) (Max) @ Vds1900 pF @ 25 V550 pF @ 25 V1200 pF @ 25 V1900 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C5.8A (Tc)8.6A (Tc)7.3A (Tc)5.8A (Tc)
Vgs (Max)±30V±25V±30V±30V
Rds On (Max) @ Id, Vgs700mOhm @ 2.9A, 10V175mOhm @ 4.3A, 10V470mOhm @ 3.65A, 10V700mOhm @ 2.9A, 10V
Supplier Device PackageTO-220F-3TO-220F-3TO-220FTO-220F-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Gate Charge (Qg) (Max) @ Vgs54 nC @ 10 V17 nC @ 10 V40 nC @ 10 V54 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Package / CaseTO-220-3 Full PackTO-220-3 Full PackTO-220-3 Full PackTO-220-3 Full Pack
PackageTubeTubeBulkTube
SeriesQFET®QFET®QFET®QFET®
Base Product NumberFQPF1FQPF11FQPF1-
Vgs(th) (Max) @ Id5V @ 250µA4V @ 250µA5V @ 250µA5V @ 250µA
FET TypeN-ChannelP-ChannelP-ChannelN-Channel
Drain to Source Voltage (Vdss)600 V60 V200 V600 V
FET Feature----

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